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1. WO2021039479 - SEMICONDUCTOR LASER DEVICE

Publication Number WO/2021/039479
Publication Date 04.03.2021
International Application No. PCT/JP2020/031036
International Filing Date 17.08.2020
IPC
H01S 5/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
H01S 5/22 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
22having a ridge or a stripe structure
H01S 5/40 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
CPC
H01S 5/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
H01S 5/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
H01S 5/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP]
Inventors
  • 能崎 信一郎 NOZAKI, Shinichiro
Agents
  • 新居 広守 NII, Hiromori
  • 寺谷 英作 TERATANI, Eisaku
  • 道坂 伸一 MICHISAKA, Shinichi
Priority Data
2019-15365326.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LASER DEVICE
(FR) DISPOSITIF LASER À SEMICONDUCTEUR
(JA) 半導体レーザ装置
Abstract
(EN)
A semiconductor laser device (100) emits laser light. The semiconductor laser device (100) is provided with: a substrate (110); an n-type semiconductor layer (121) disposed over the substrate (110); a light emitting layer (122) disposed over the n-type semiconductor layer (121); a p-type semiconductor layer (123) disposed over the light emitting layer (122); and one or more p-electrodes (130) disposed over the p-type semiconductor layer (123). One or more grooves (180) reaching from an upper surface of the p-type semiconductor layer (123) to a lower surface of the light emitting layer (122) and extending in a laser light resonance direction are formed. Compared to a non-injection region length which is the distance from an exit end face (101) from which laser light exits to the one or more p-electrodes (130), a left-over length which is the distance from the exit end face (101) to a portion of each of the one or more grooves (180) closest to the one or more p-electrodes (130) is longer.
(FR)
La présente invention concerne un dispositif laser à semiconducteur (100) qui émet une lumière laser. Le dispositif laser à semiconducteur (100) est pourvu : d'un substrat (110) ; d'une couche semiconductrice de type n (121) disposée sur le substrat (110) ; d'une couche électroluminescente (122) disposée sur la couche semiconductrice de type n (121) ; d'une couche semiconductrice de type p (123) disposée sur la couche électroluminescente (122) ; et d'une ou plusieurs électrodes p (130) disposées sur la couche semiconductrice de type p (123). Une ou plusieurs rainures (180) allant d'une surface supérieure de la couche semiconductrice de type p (123) jusqu'à une surface inférieure de la couche électroluminescente (122) et s'étendant dans une direction de résonance de lumière laser sont formées. Comparativement à une longueur de région de non-injection qui est la distance depuis une face d'extrémité de sortie (101) à partir de laquelle la lumière laser sort de la ou des électrodes p (130), une longueur restante qui est la distance depuis la face d'extrémité de sortie (101) à une partie de chacune parmi la ou des rainures (180) la plus proche de la ou des électrodes p (130) est plus longue.
(JA)
半導体レーザ装置(100)は、レーザ光を出射する半導体レーザ装置(100)であって、基板(110)と、基板(110)の上方に配置されるn型半導体層(121)と、n型半導体層(121)の上方に配置される発光層(122)と、発光層(122)の上方に配置されるp型半導体層(123)と、p型半導体層(123)の上方に配置される1以上のp電極(130)とを備え、p型半導体層(123)の上面から発光層(122)の下面まで到達し、かつ、レーザ光の共振方向に延びる1以上の溝(180)が形成されており、レーザ光が出射される出射端面(101)から1以上のp電極(130)までの距離である非注入領域長よりも、出射端面(101)から、1以上の溝(180)の各々が1以上のp電極(130)に最も近づく部分までの距離である残し長の方が長い。
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