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1. WO2021039432 - SUBSTRATE LIQUID-TREATMENT METHOD, SUBSTRATE LIQUID-TREATMENT DEVICE, AND COMPUTER-READABLE RECORDING MEDIUM

Publication Number WO/2021/039432
Publication Date 04.03.2021
International Application No. PCT/JP2020/030836
International Filing Date 14.08.2020
IPC
C23C 18/31 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, i.e. electroless plating
31Coating with metals
CPC
C23C 18/31
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, e.g. electroless plating
31Coating with metals
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 岩井 和俊 IWAI Kazutoshi
  • 稲富 裕一郎 INATOMI Yuichiro
  • 丹羽 崇文 NIWA Takafumi
Agents
  • 中村 行孝 NAKAMURA Yukitaka
  • 朝倉 悟 ASAKURA Satoru
  • 森 秀行 MORI Hideyuki
  • 村越 卓 MURAKOSHI Suguru
Priority Data
2019-15480227.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE LIQUID-TREATMENT METHOD, SUBSTRATE LIQUID-TREATMENT DEVICE, AND COMPUTER-READABLE RECORDING MEDIUM
(FR) PROCÉDÉ DE TRAITEMENT DE LIQUIDE DE SUBSTRAT, DISPOSITIF DE TRAITEMENT DE LIQUIDE DE SUBSTRAT ET SUPPORT D'ENREGISTREMENT LISIBLE PAR ORDINATEUR
(JA) 基板液処理方法、基板液処理装置、及びコンピュータ読み取り可能な記録媒体
Abstract
(EN)
This substrate liquid-treatment method includes: a step of preparing a substrate having a surface including a recess in which a seed layer is layered; a step of supplying an electroless plating liquid to the surface of the substrate to form a liquid film of the electroless plating liquid on the surface while filling the recess with the electroless plating liquid; and a step of adjusting the temperature of the liquid film from a first temperature for depositing metal on the seed layer to a second temperature lower than the first temperature and causing the recess to be buried by the metal from the bottom side so that no voids are formed.
(FR)
La présente invention concerne un procédé de traitement de liquide de substrat comprenant : une étape consistant à préparer un substrat présentant une surface qui comprend un évidement dans lequel une couche de germe est stratifiée ; une étape consistant à approvisionner un liquide de dépôt autocatalytique à la surface du substrat afin de former un film liquide du liquide de dépôt autocatalytique sur la surface tout en remplissant l'évidement avec le liquide de dépôt autocatalytique ; et une étape consistant à régler la température du film liquide à partir d'une première température afin de déposer un métal sur la couche de germe à une seconde température inférieure à la première température et d'entraîner l'enfouissement de l'évidement par le métal à partir du côté inférieur, de sorte qu'aucun vide n'est formé.
(JA)
基板液処理方法は、シード層が積層されている凹部を含む表面を持つ基板を準備する工程と、基板の表面に無電解めっき液を供給して、凹部を無電解めっき液で満たしつつ表面上に無電解めっき液の液膜を形成する工程と、 シード層上において金属を析出させる第1の温度から、第1の温度よりも低い第2の温度に液膜の温度を調整し、凹部が、ボイドを生じさせないように、金属によって底部側から埋められる工程と、を含む。
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