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1. WO2021039270 - DEVICE FOR PRODUCING AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Publication Number WO/2021/039270
Publication Date 04.03.2021
International Application No. PCT/JP2020/029324
International Filing Date 30.07.2020
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/46 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
CPC
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
Applicants
  • 株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 村田 等 MURATA Hitoshi
  • 国井 泰夫 KUNII Yasuo
  • 上野 正昭 UENO Masaaki
Agents
  • 福岡 昌浩 FUKUOKA Masahiro
  • 阿仁屋 節雄 ANIYA Setuo
Priority Data
2019-15846630.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) DEVICE FOR PRODUCING AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF DE FABRICATION ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置の製造方法および製造装置
Abstract
(EN)
Provided is technology comprising a reaction container inside of which is disposed a body to be processed, a heating unit for emitting heat, and a radiation control element disposed between the reaction container and the heating unit, wherein the radiation control element radiates, to the reaction container, radiation waves of a wavelength range different from the heat radiated from the heating unit.
(FR)
L'invention concerne une technologie comprenant un récipient de réaction à l'intérieur duquel est disposé un corps à traiter, une unité de chauffage destinée à émettre de la chaleur et un élément de commande de rayonnement placé entre le récipient de réaction et l'unité de chauffage, l'élément de commande de rayonnement émettant, vers le récipient de réaction, des ondes de rayonnement d'une plage de longueurs d'onde différente de la chaleur émise par l'unité de chauffage.
(JA)
内部に被処理体が配置される反応容器と、熱を発する加熱部と、反応容器と加熱部との間に配置される輻射制御体と、を備え、輻射制御体は、加熱部からの放射熱とは異なる波長帯の輻射波を反応容器へ放射する技術が提供される。
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