Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021039074 - THERMOELECTRIC CONVERSION ELEMENT

Publication Number WO/2021/039074
Publication Date 04.03.2021
International Application No. PCT/JP2020/024772
International Filing Date 24.06.2020
IPC
H01L 35/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
C01B 19/04 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
19Selenium; Tellurium; Compounds thereof
04Binary compounds
C01G 3/12 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
3Compounds of copper
12Sulfides
H01L 35/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device
CPC
C01B 19/04
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
04Binary compounds ; including binary selenium-tellurium compounds
C01G 3/12
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
3Compounds of copper
12Sulfides
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device ; including details about, e.g., housing, insulation, geometry, module
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
  • 学校法人トヨタ学園 TOYOTA SCHOOL FOUNDATION [JP]/[JP]
Inventors
  • 足立 真寛 ADACHI, Masahiro
  • 山本 喜之 YAMAMOTO, Yoshiyuki
  • 竹内 恒博 TAKEUCHI, Tsunehiro
Agents
  • 北野 修平 KITANO, Shuhei
  • 田中 勝也 TANAKA, Katsuya
Priority Data
2019-15854730.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THERMOELECTRIC CONVERSION ELEMENT
(FR) ÉLÉMENT DE CONVERSION THERMOÉLECTRIQUE
(JA) 熱電変換素子
Abstract
(EN)
This thermoelectric conversion element comprises: a thermoelectric conversion material part which is composed of a compound semiconductor comprising a first base material element A and a second base material element B, and is represented by Ax-cBy in which the value of x is smaller by c with respect to a compound AxBy according to the stoichiometric ratio; a first electrode that is disposed in contact with the thermoelectric conversion material part; and a second electrode that is disposed in contact with the thermoelectric conversion material part and separated from the first electrode. The A-B state diagram includes a first region that corresponds to a low temperature phase, a second region that corresponds to a high temperature phase, and a third region that corresponds to a coexisting phase which is sandwiched between the low temperature phase and the high temperature phase, the low temperature phase and the high temperature phase coexisting in the coexisting phase. The temperature of the boundary between the first region and the third region varies monotonically with the change in c.
(FR)
La présente invention concerne un élément de conversion thermoélectrique comprenant : une partie de matériau de conversion thermoélectrique qui est composée d'un semi-conducteur composé comprenant un premier élément de matériau de base A et un second élément de matériau de base B, et est représentée par Ax-cBy dans lequel la valeur de x est inférieure de c par rapport à un composé AxBy selon le rapport stœchiométrique ; une première électrode qui est disposée en contact avec la partie de matériau de conversion thermoélectrique ; et une seconde électrode qui est disposée en contact avec la partie de matériau de conversion thermoélectrique et séparée de la première électrode. Le diagramme d'état A-B comprend une première région qui correspond à une phase à basse température, une deuxième région qui correspond à une phase à haute température et une troisième région qui correspond à une phase coexistante qui est intercalée entre la phase à basse température et la phase à haute température, la phase à basse température et la phase à haute température coexistant dans la phase coexistante. La température de la limite entre la première région et la troisième région varie de façon monotone avec le changement de c.
(JA)
熱電変換素子は、第1の母材元素Aと、第2の母材元素Bとから構成され、化学量論比に従った化合物Aに対してxの値がcだけ小さいAx-cで表される化合物半導体から構成される熱電変換材料部と、熱電変換材料部と接触して配置される第1の電極と、熱電変換材料部と接触し、第1の電極と離れて配置される第2の電極と、を備える。A-Bの状態図は、低温相に対応する第1領域と、高温相に対応する第2領域と、低温相と高温相とによって挟まれた、低温相と高温相とが共存する共存相に対応する第3領域と、を含む。第1領域と第3領域との境界の温度は、cの変化に伴って単調に変化する。
Latest bibliographic data on file with the International Bureau