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1. WO2021039073 - FLUID SUPPLY SYSTEM

Publication Number WO/2021/039073
Publication Date 04.03.2021
International Application No. PCT/JP2020/024738
International Filing Date 24.06.2020
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/448 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
CPC
C23C 16/448
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
Applicants
  • 株式会社フジキン FUJIKIN INCORPORATED [JP]/[JP]
Inventors
  • 高澤 竜平 TAKASAWA, Ryuhei
  • 田頭 直人 TAGASHIRA, Naoto
  • 船引 輝幸 FUNABIKI, Teruyuki
  • 上林 正典 UEBAYASHI, Masanori
Agents
  • 特許業務法人後藤特許事務所 GOTOH & PARTNERS
Priority Data
2019-15635529.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FLUID SUPPLY SYSTEM
(FR) SYSTÈME D'ALIMENTATION EN FLUIDE
(JA) 流体供給システム
Abstract
(EN)
This fluid supply system is provided with: a support body including a base plate, a side plate provided on one side in a longitudinal direction of the base plate so as to be perpendicular to the base plate, and a top plate provided at one end in a height direction of the base plate so as to be perpendicular to the base plate and the side plate; a process gas supply unit provided on an outer surface of the top plate; a liquid supply unit provided on an inner surface of the side plate so as to be in communication with the process gas supply unit through a communication flow path forming block; and a purge gas supply unit provided on the inner surface of the base plate so as to be in communication with the process gas supply unit via a communication pipe.
(FR)
L'invention concerne un système d'alimentation en fluide comportant : un corps de support comprenant une plaque de base, une plaque latérale disposée sur un côté dans une direction longitudinale de la plaque de base de manière à être perpendiculaire à la plaque de base, et une plaque supérieure disposée à une extrémité dans une direction de hauteur de la plaque de base de façon à être perpendiculaire à la plaque de base et à la plaque latérale ; une unité d'alimentation en gaz de traitement disposée sur une surface externe de la plaque supérieure ; une unité d'alimentation en liquide disposée sur une surface interne de la plaque latérale de façon à être en communication avec l'unité d'alimentation en gaz de traitement par l'intermédiaire d'un bloc de formation de trajet d'écoulement de communication ; et une unité d'alimentation en gaz de purge disposée sur la surface interne de la plaque de base de façon à être en communication avec l'unité d'alimentation en gaz de traitement par l'intermédiaire d'un tuyau de communication.
(JA)
流体供給システムは、ベース板と、ベース板と直交するようにベース板の長手方向の一方側に設けられる側板と、ベース板及び側板と直交するようにベース板の高さ方向の一端に設けられる天板と、を有する支持体と、天板の外面に設けられるプロセスガス供給ユニットと、連通流路形成ブロックを通じてプロセスガス供給ユニットと連通されるように側板の内面に設けられる液体供給ユニットと、連通管を通じてプロセスガス供給ユニットと連通されるようにベース板の内面に設けられるパージガス供給ユニットと、を備える。
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