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1. WO2021037423 - VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

Publication Number WO/2021/037423
Publication Date 04.03.2021
International Application No. PCT/EP2020/068527
International Filing Date 01.07.2020
IPC
H01L 29/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
CPC
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
H01L 29/7788
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
7788Vertical transistors
H01L 29/7789
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
7789the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
Applicants
  • ROBERT BOSCH GMBH [DE]/[DE]
Inventors
  • BARINGHAUS, Jens
Priority Data
10 2019 212 645.623.08.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERTIKALER FELDEFFEKTTRANSISTOR UND VERFAHREN ZUM HERSTELLEN DESSELBEN
(EN) VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF
(FR) TRANSISTOR À EFFET DE CHAMP VERTICAL ET SON PROCÉDÉ DE PRODUCTION
Abstract
(DE)
In verschiedenen Ausführungsbeispielen wird ein vertikaler Feldeffekttransistor (100) bereitgestellt. Der vertikale Feldeffekttransistor (100) weist eine Graben-Struktur (128) mit einer ersten Seite und einer zweiten Seite, die der ersten Seite gegenüber liegt, auf. An der ersten Seite ist ein Feldeffekttransistor (100) (FET)-Kanal ausgebildet und die zweite Seite ist frei von einem FET-Kanal. Der FET-Kanal weist ein Galliumnitrid (GaN)-Gebiet und ein daran angrenzendes Aluminiumgalliumnitrid (AIGaN)-Gebiet (110) auf. Das GaN-Gebiet (132) weist einen p-leitenden ersten Bereich (106) und einen darauf ausgebildeten zweiten Bereich (108) auf. Der vertikale Feldeffekttransistor (100) weist weiterhin eine Source-Elektrode (130) auf, die mit dem p-leitenden ersten Bereich (106) des GaN-Gebiets (132) und dem AIGaN-Gebiet (110) elektrisch leitend verbunden ist.
(EN)
The invention relates to a vertical field effect transistor (100) which is provided in various embodiments. The vertical field effect transistor (100) has a trench structure (128) with a first side and a second side that is opposite the first side. On the first side, a field effect transistor (100) (FET)-channel is formed and the second side is free of a FET channel. The FET channel has a gallium nitride (GaN) area and an aluminum gallium nitride (AlGaN) area (110) adjacent thereto. The GaN area (132) has a p-conducting first region (106) and a second region (108) formed thereon. The vertical field effect transistor (100) further comprises a source electrode (130) which is electroconductively connected to the p-conducting first region (106) of the GaN area (132) and the AlGaN area (110).
(FR)
L'invention concerne un transistor à effet de champ vertical (FET) (100) qui est fourni dans divers modes de réalisation. Le transistor à effet de champ vertical (100) a une structure de tranchée (128) avec un premier côté et un second côté qui est opposé au premier côté. Sur le premier côté, un canal de transistor à effet de champ (100) (FET) est formé et le second côté est exempt de canal FET. Le canal FET comprend une zone de nitrure de gallium (GaN) et une zone de nitrure de gallium-aluminium (AlGaN) adjacente à celle-ci. La zone de GaN (132) a une première région conductrice de type p (106) et une seconde région (108) formée sur celle-ci. Le transistor à effet de champ vertical (100) comprend en outre une électrode de source (130) qui est connectée de manière électriquement conductrice à la première région conductrice de type p (106) de la zone de GaN (132) et à la zone d'AlGaN (110).
Also published as
Latest bibliographic data on file with the International Bureau