Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021036264 - ANTI-REFLECTION FILM STRUCTURE AND PERC CELL

Publication Number WO/2021/036264
Publication Date 04.03.2021
International Application No. PCT/CN2020/083206
International Filing Date 03.04.2020
IPC
H01L 31/0216 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/068 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/02168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
02168the coatings being antireflective or having enhancing optical properties for the solar cells
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
H01L 31/1868
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1868Passivation
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • 苏州腾晖光伏技术有限公司 SUZHOU TALESUN SOLAR TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • 魏青竹 WEI, Qingzhu
  • 倪志春 NI, Zhichun
  • 苗凤秀 MIAO, Fengxiu
  • 连维飞 LIAN, Weifei
  • 李怡洁 LI, Yijie
Agents
  • 北京弘权知识产权代理事务所(普通合伙) CHINABLE IP
Priority Data
201910806038.029.08.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ANTI-REFLECTION FILM STRUCTURE AND PERC CELL
(FR) STRUCTURE DE PELLICULE ANTIREFLET ET CELLULE PERC
(ZH) 一种减反射膜结构及PERC电池
Abstract
(EN)
An anti-reflection film structure and a PERC cell, comprising a first anti-reflection layer, a second anti-reflection layer and a third anti-reflection layer which are sequentially laminated. The first anti-reflection layer is formed on a silicon substrate (200). The first anti-reflection layer is any one of an SiO x film layer (111), an AlO­ x film layer and an MgF 2 film layer (112), or the first anti-reflection layer is a laminated structure formed by laminating the AlO x film layer and the MgF 2 film layer. The second anti-reflection layer is any one of an SiN x film layer (121), an SiC film layer (122) and a TiO x film layer (123), or the second anti-reflection layer is a laminated structure formed by laminating at least two selected from the SiN x film layer (121), the SiC film layer (122) and the TiO x film layer (123). The third anti-reflection layer is a laminated structure formed by laminating an SiO xC y film layer (131) or an SiO xC y film layer (131) and an SiO xN y film layer (132). The anti-reflection film structure (100) effectively reduces the reflection of incident light, and in particular, reduces the reflection of light having a wavelength less than 500 nm, and improves the spectral response of light having a wavelength greater than 800 nm, and the reflectivity of a front medium film can be reduced to be within 1%.
(FR)
L’invention concerne une structure de pellicule antireflet et une cellule PERC, comprenant une première couche antireflet, une deuxième couche antireflet et une troisième couche antireflet qui sont stratifiées dans cet ordre. La première couche antireflet est formée sur un substrat de silicium (200). La première couche antireflet est n’importe quelle couche parmi une couche de pellicule de SiO x (111), une couche de pellicule d’AlO- x et une couche de pellicule de MgF 2 (112), ou la première couche antireflet est une structure stratifiée formée en stratifiant la couche de pellicule d’AlO x et la couche de pellicule de MgF 2. La deuxième couche antireflet est n’importe quelle couche parmi une couche de pellicule de SiN x (121), une couche de pellicule de SiC (122) et une couche de pellicule de TiO x (123), ou la deuxième couche antireflet est une structure stratifiée formée en stratifiant au moins deux couches sélectionnées parmi la couche de pellicule de SiN x (121), la couche de pellicule de SiC (122) et la couche de pellicule de TiO x (123). La troisième couche antireflet est une structure stratifiée formée en stratifiant une couche de pellicule de SiO xC y (131), ou une couche de pellicule de SiO xC y (131) et une couche de pellicule de SiO xN y (132). La structure de pellicule antireflet (100) réduit efficacement la réflexion de lumière incidente, et en particulier, réduit la réflexion de lumière dont la longueur d’onde est inférieure à 500 nm, et améliore la réponse spectrale de lumière dont la longueur d’onde est supérieure à 800 nm, et la réflectivité d’une pellicule de milieu avant peut être réduite jusqu’à 1 %.
(ZH)
一种减反射膜结构及PERC电池,包括依次层叠的第一减反射层、第二减反射层及第三减反射层;第一减反射层用于形成在硅基体(200)上,第一减反射层为SiO x膜层(111)、AlO­ x膜层和MgF 2膜层(112)中任一种,或者,第一减反射层为由AlO x膜层和MgF 2膜层层叠形成的叠层结构;第二减反射层为SiN x膜层(121)、SiC膜层(122)和TiO x膜层(123)中任一种,或者,第二减反射层为由选自SiN x膜层(121)、SiC膜层(122)及TiO x膜层(123)中的至少两种层叠形成的叠层结构;第三减反射层为SiO xC y膜层(131)或为由SiO xC y膜层(131)和SiO xN y膜层(132)层叠形成的叠层结构。该减反射膜结构(100),能够有效降低对入射光的反射,尤其是降低波长小于500nm波段光的反射,同时提升波长大于800nm波段的光谱响应,可将正面介质膜的反射率降低到1%以内。
Also published as
Latest bibliographic data on file with the International Bureau