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1. WO2021011847 - PERFORMING A REFRESH OPERATION BASED ON A CHARACTERISTIC OF A MEMORY SUB-SYSTEM

Publication Number WO/2021/011847
Publication Date 21.01.2021
International Application No. PCT/US2020/042461
International Filing Date 17.07.2020
IPC
G11C 11/406 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
G11C 11/4096 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write circuits
4096Input/output data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
G06F 3/06 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
06Digital input from, or digital output to, record carriers
G06F 11/10 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
11Error detection; Error correction; Monitoring
07Responding to the occurrence of a fault, e.g. fault tolerance
08Error detection or correction by redundancy in data representation, e.g. by using checking codes
10Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
CPC
G11C 11/1673
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1673Reading or sensing circuits or methods
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
G11C 11/40607
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
40607Refresh operations in memory devices with an internal cache or data buffer
G11C 11/40626
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406Management or control of the refreshing or charge-regeneration cycles
40626Temperature related aspects of refresh operations
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • XIE, Tingjun
  • JEON, Seungjune
  • CHEN, Zhengang
  • SHEN, Zhenlei
  • KWONG, Charles See Yeung
Agents
  • PORTNOVA, Marina
  • ANREEV, Dmitry
  • KRUEGER, Paul M.
Priority Data
16/514,84017.07.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PERFORMING A REFRESH OPERATION BASED ON A CHARACTERISTIC OF A MEMORY SUB-SYSTEM
(FR) RÉALISATION D'UNE OPÉRATION DE RAFRAÎCHISSEMENT SUR LA BASE D'UNE CARACTÉRISTIQUE D'UN SOUS-SYSTÈME DE MÉMOIRE
Abstract
(EN)
A refresh operation can be performed at a memory sub-system The refresh operation can performed at a current frequency. A write count associated with the memory sub-system can be received. A determination can be made as to whether the write count associated with the memory sub-system satisfies a write count threshold. In response to determining that the write count associated with the memory sub-system satisfies the write count threshold, the refresh operation can be performed at an increased frequency relative to the current frequency.
(FR)
Une opération de rafraîchissement peut être réalisée au niveau d'un sous-système de mémoire. L'opération de rafraîchissement peut être réalisée à une fréquence courante. Un compte d'écritures associé au sous-système de mémoire peut être reçu. Il est possible de déterminer si le compte d'écritures associé au sous-système de mémoire satisfait ou non un seuil de compte d'écritures. En réponse à la détermination du fait que le compte d'écritures associé au sous-système de mémoire satisfait le seuil de compte d'écritures, l'opération de rafraîchissement peut être réalisée à une fréquence accrue par rapport à la fréquence courante.
Also published as
Latest bibliographic data on file with the International Bureau