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1. WO2021011019 - TECHNIQUES FOR MAKING INTEGRATED INDUCTORS AND RELATED SEMICONDUCTOR DEVICES, ELECTRONIC SYSTEMS, AND METHODS

Publication Number WO/2021/011019
Publication Date 21.01.2021
International Application No. PCT/US2019/047911
International Filing Date 23.08.2019
IPC
H01L 49/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Thin-film or thick-film devices
CPC
H01L 21/76802
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
H01L 21/76843
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76843formed in openings in a dielectric
H01L 23/5227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
5227Inductive arrangements or effects of, or between, wiring layers
H01L 24/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas
07Structure, shape, material or disposition of the bonding areas after the connecting process
08of an individual bonding area
H01L 28/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
10Inductors
H01L 2924/01013
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
01Chemical elements
01013Aluminum [Al]
Applicants
  • MICROCHIP TECHNOLOGY INCORPORATED [US]/[US]
Inventors
  • LENG, Yaojian
Agents
  • WATSON, James C.
  • BACA, Andrew J.
  • BAKER, Gregory C.
  • BEZDJIAN, Daniel J.
  • FLORES, Jesse M.
  • GUNN, J. Jeffrey
  • LOFDAHL, Jordan
  • NIXON, Jason P.
  • WALKOWSKI, Joseph A.
  • WOODHOUSE, Kyle M.
Priority Data
62/875,91718.07.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TECHNIQUES FOR MAKING INTEGRATED INDUCTORS AND RELATED SEMICONDUCTOR DEVICES, ELECTRONIC SYSTEMS, AND METHODS
(FR) TECHNIQUES DE FABRICATION D'INDUCTANCES INTÉGRÉES ET DISPOSITIFS À SEMI-CONDUCTEURS, SYSTÈMES ÉLECTRONIQUES ET PROCÉDÉS ASSOCIÉS
Abstract
(EN)
In some embodiments, integrated inductors may be built using processes for forming interconnects of semiconductor devices without requiring additional process steps. Integrated inductor coils may be formed by, for example, shunting an overlying electrically conductive material, such as, for example, bond pad metals (e.g., aluminum and alloys thereof), to an underlying electrically conductive material, such as, for example, an uppermost layer of wiring formed using Damascene processes (e.g., utilizing copper and alloys thereof), without vias to interconnect the two materials. In some embodiments, integrated inductors formed utilizing such processes may have a symmetric spiral design.
(FR)
Dans certains modes de réalisation de la présente invention, des inductances intégrées peuvent être construites au moyen de procédés de formation d'interconnexions de dispositifs à semi-conducteurs sans nécessiter d'étapes de traitement supplémentaires. Des bobines d'induction intégrées peuvent être formées, par exemple par dérivation d'un matériau conducteur de l'électricité sous-jacent, tel que, par exemple, des métaux d'aire de soudure (par exemple l'aluminium et ses alliages), vers un matériau conducteur de l'électricité sous-jacent, tel que, par exemple, une couche supérieure de câblage formée au moyen de procédés de damasquinage (par exemple à l'aide de cuivre et de ses alliages), sans trous d'interconnexion pour l'interconnexion des deux matériaux. Dans certains modes de réalisation, des inductances intégrées, formées au moyen de tels procédés, peuvent avoir la forme de spirale symétrique.
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