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1. WO2021010593 - LED TRANSFER METHOD AND DISPLAY MODULE MANUFACTURED THEREBY

Publication Number WO/2021/010593
Publication Date 21.01.2021
International Application No. PCT/KR2020/007216
International Filing Date 03.06.2020
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
Applicants
  • SAMSUNG ELECTRONICS CO., LTD. [KR]/[KR]
Inventors
  • KWON, Ohjae
  • KANG, Jinmo
  • KIM, Donghwan
  • NAMKUNG, Yong
  • HWANG, Seondeok
Agents
  • KIM, Tae-hun
  • JEONG, Hong-sik
Priority Data
10-2019-008459812.07.2019KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LED TRANSFER METHOD AND DISPLAY MODULE MANUFACTURED THEREBY
(FR) PROCÉDÉ DE TRANSFERT DE DEL ET MODULE D'AFFICHAGE AINSI FABRIQUÉ
Abstract
(EN)
A micro light emitting diode (LED) transfer method is provided. The micro LED transfer method includes: preparing a transfer substrate including a plurality of micro LEDs, the plurality of micro LEDs having electrodes disposed in a first direction and a second direction different from the first direction on the transfer substrate, sequentially transferring a first set of micro LEDs among the plurality of micro LEDs in block units from the transfer substrate to first regions of a target substrate and sequentially transferring a second set of micro LEDs among the plurality of micro LEDs in block units from the transfer substrate to second regions of the target substrate, and in the sequential transferring of the second set of micro LEDs, the second set of micro LEDs transferred to the second regions are disposed in the same electrode direction as an electrode direction of the first set of micro LEDs transferred to the first regions.
(FR)
L'invention concerne un procédé de transfert de micro-diodes électroluminescentes (micro-DEL). Le procédé de transfert de micro-DEL comprend : la préparation d'un substrat de transfert comprenant une pluralité de micro-DEL, la pluralité de micro-DEL ayant des électrodes disposées dans une première direction et une seconde direction différente de la première direction sur le substrat de transfert, le transfert séquentiel d'un premier ensemble de micro-DEL parmi la pluralité de micro-DEL dans des unités de bloc à partir du substrat de transfert vers des premières régions d'un substrat cible et le transfert séquentiel d'un second ensemble de micro-DEL parmi la pluralité de micro-DEL dans des unités de bloc à partir du substrat de transfert vers des secondes régions du substrat cible, et en ce qui concerne le transfert séquentiel du second ensemble de micro-DEL, le second ensemble de micro-DEL transféré vers les secondes régions est disposé dans la même direction d'électrode que la direction d'électrode du premier ensemble de micro-DEL transféré vers les premières régions.
Also published as
Latest bibliographic data on file with the International Bureau