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1. WO2021010287 - PROCESSING DEVICE AND PROCESSING METHOD

Publication Number WO/2021/010287
Publication Date 21.01.2021
International Application No. PCT/JP2020/026891
International Filing Date 09.07.2020
IPC
B23K 26/53 2014.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
50Working by transmitting the laser beam through or within the workpiece
53for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B23K 26/53
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
50Working by transmitting the laser beam through or within the workpiece
53for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 田之上 隼斗 TANOUE, Hayato
  • 山下 陽平 YAMASHITA, Yohei
Agents
  • 金本 哲男 KANEMOTO, Tetsuo
  • 萩原 康司 HAGIWARA, Yasushi
  • 扇田 尚紀 OGITA, Naoki
  • 三根 卓也 MINE, Takuya
Priority Data
2019-13307018.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PROCESSING DEVICE AND PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT ET PROCÉDÉ DE TRAITEMENT
(JA) 処理装置及び処理方法
Abstract
(EN)
This processing device for processing an object being processed is provided with a modifying unit for forming a plurality of modified layers in a surface direction, by irradiating with laser light the inside of the object being processed, and a control unit for controlling the operation of at least the modifying unit, wherein the control unit controls the modifying unit in such a way as to form a peripheral edge modified layer serving as a starting point for peeling of a peripheral edge portion of the object being processed that is to be removed, a first internal surface modified layer which is formed in an annular shape concentric with the peripheral edge modified layer, radially inward of the peripheral edge modified layer, and a second internal surface modified layer which is formed in a spiral shape, radially inward of the first internal surface modified layer.
(FR)
L'invention concerne un dispositif de traitement destiné à traiter un objet en cours de traitement, comprenant une unité de modification destinée à former une pluralité de couches modifiées dans une direction de surface, par l'exposition de l'intérieur de l'objet en cours de traitement à une lumière laser, et une unité de commande destinée à commander le fonctionnement d'au moins l'unité de modification, l'unité de commande commandant l'unité de modification de manière à former une couche modifiée de bord périphérique, servant de point de départ destiné au pelage d'une partie de bord périphérique de l'objet en cours de traitement qui doit être éliminée, une première couche modifiée de surface interne, qui est réalisée sous une forme annulaire concentrique avec la couche modifiée de bord périphérique, radialement vers l'intérieur de la couche modifiée de bord périphérique, et une seconde couche modifiée de surface interne, qui est réalisée sous forme de spirale, radialement vers l'intérieur de la première couche modifiée de surface interne.
(JA)
処理対象体を処理する処理装置であって、前記処理対象体の内部にレーザ光を照射して、面方向に沿って複数の改質層を形成する改質部と、少なくとも前記改質部の動作を制御する制御部と、を備え、前記制御部は、前記処理対象体の除去対象の周縁部の剥離の基点となる周縁改質層と、前記周縁改質層の径方向内側において、前記周縁改質層と同心円の環状に形成される第1の内部面改質層と、前記第1の内部面改質層の径方向内側において、螺旋状に形成される第2の内部面改質層と、を形成するように前記改質部を制御する。
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