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1. WO2021010000 - SEMICONDUCTOR DEVICE

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Publication Number WO/2021/010000
Publication Date 21.01.2021
International Application No. PCT/JP2020/018838
International Filing Date 11.05.2020
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 29/739 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
Applicants
  • 富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 窪内　源宜 KUBOUCHI Motoyoshi
Agents
  • 龍華国際特許業務法人 RYUKA IP LAW FIRM
Priority Data
2019-13001712.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
front page image
Abstract
(EN)
Provided is a semiconductor device comprising: a semiconductor substrate having a first conductivity-type drift region; an inner region including a second conductivity-type base region provided between an upper surface of the semiconductor substrate and the drift region; and a well region which has a doping concentration higher than that of the base region, is provided from the upper surface of the semiconductor substrate to a position deeper than a lower end of the base region, and is disposed sandwiching the inner region on the upper surface of the semiconductor substrate. The inner region has a length in a lengthwise direction defined in advance on the upper surface of the semiconductor substrate, and includes a plurality of trench portions reaching from the upper surface of the semiconductor substrate to the drift region. At least one of the trench portions is separated into two or more partial trenches in the lengthwise direction in a region not overlapping the well region.
(FR)
L'invention concerne un dispositif à semi-conducteur comprenant : un substrat semi-conducteur ayant une zone de migration d'un premier type de conductivité ; une zone interne comprenant une zone de base d'un second type de conductivité disposée entre une surface supérieure du substrat semi-conducteur et la zone de migration ; et une zone de puits qui a une concentration de dopage supérieure à celle de la zone de base, est disposée depuis la surface supérieure du substrat semi-conducteur jusqu'à une position plus profonde qu'une extrémité inférieure de la zone de base, et est disposée en prenant en sandwich la zone interne sur la surface supérieure du substrat semi-conducteur. La zone interne a une longueur dans une direction longitudinale définie à l'avance sur la surface supérieure du substrat semi-conducteur, et comprend une pluralité de parties tranchée s'étendant de la surface supérieure du substrat semi-conducteur à la zone de migration. Au moins une des parties tranchée est séparée en au moins deux tranchées partielles dans la direction longitudinale dans une zone ne chevauchant pas la zone de puits.
(JA)
第１導電型のドリフト領域を含む半導体基板と、半導体基板の上面とドリフト領域との間に設けられた第２導電型のベース領域を含む内側領域と、ベース領域よりドーピング濃度が高く、且つ、半導体基板の上面からベース領域の下端よりも深い位置まで設けられ、半導体基板の上面において内側領域を挟んで配置されたウェル領域とを備え、内側領域は、半導体基板の上面における予め定められた長手方向に長手を有し、半導体基板の上面からドリフト領域に達するトレンチ部を複数有し、少なくとも一つのトレンチ部は、ウェル領域と重ならない領域において、長手方向に２つ以上の部分トレンチに分離している半導体装置を提供する。
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