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1. WO2021009801 - SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2021/009801
Publication Date 21.01.2021
International Application No. PCT/JP2019/027700
International Filing Date 12.07.2019
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 29/739 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 濱田 憲治 HAMADA Kenji
  • 小西 和也 KONISHI Kazuya
  • 川原 洸太朗 KAWAHARA Kotaro
Agents
  • 吉竹 英俊 YOSHITAKE Hidetoshi
  • 有田 貴弘 ARITA Takahiro
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置、および、半導体装置の製造方法
Abstract
(EN)
The present invention enhances minority carrier injection efficiency in order to improve current-carrying capability. In this semiconductor device, an IGBT comprises: a first drift layer; a collector region; a base region; an emitter region; an insulating film; a gate electrode; and a first high carrier lifetime region that is formed at a position closer to the collector region than the base region, and that has a carrier lifetime which is longer than that of the first drift layer. An FWD comprises: a second drift layer; an anode region; and a second high carrier lifetime region that is formed at a position closer to the anode region than the lower surface of the second drift layer, and that has a carrier lifetime which is longer than that of the second drift layer.
(FR)
La présente invention améliore l'efficacité d'injection de porteurs minoritaires afin d'améliorer la capacité de transport de courant. Dans ce dispositif à semi-conducteur, un IGBT comprend : une première couche de dérive ; une région collectrice ; une région de base ; une région émettrice ; un film isolant ; une électrode de grille ; et une première région à durée de vie de porteurs élevée qui est formée au niveau d'une position plus proche de la région collectrice que la région de base, et qui a une durée de vie de porteurs qui est plus longue que celle de la première couche de dérive. Un FWD comprend : une seconde couche de dérive ; une région d'anode ; et une seconde région à durée de vie de porteurs élevée qui est formée au niveau d'une position plus proche de la région d'anode que la surface inférieure de la seconde couche de dérive, et qui a une durée de vie de porteurs qui est plus longue que celle de la seconde couche de dérive.
(JA)
通電能力を向上させるため、少数キャリア注入効率を高める。半導体装置においては、IGBTは、第1のドリフト層と、コレクタ領域と、ベース領域と、エミッタ領域と、絶縁膜と、ゲート電極と、ベース領域よりもコレクタ領域に近い位置に形成され、キャリア寿命が第1のドリフト層より長い第1の高キャリア寿命領域とを備える。FWDは、第2のドリフト層と、アノード領域と、第2のドリフト層の下面よりもアノード領域に近い位置に形成され、キャリア寿命が第2のドリフト層より長い第2の高キャリア寿命領域とを備える。
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