Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021008040 - DRY ETCHING METHOD FOR FILM LAYER STRUCTURE, AND FILM LAYER STRUCTURE

Publication Number WO/2021/008040
Publication Date 21.01.2021
International Application No. PCT/CN2019/118443
International Filing Date 14.11.2019
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
H01L 21/31116
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
31116by dry-etching
H01L 21/31138
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31127Etching organic layers
31133by chemical means
31138by dry-etching
H01L 21/31144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31144using masks
H01L 21/32136
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
Applicants
  • TCL华星光电技术有限公司 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 胡冲 HU, Chong
  • 韦显旺 WEI, Xianwang
Agents
  • 深圳紫藤知识产权代理有限公司 PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD.
Priority Data
201910630354.712.07.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DRY ETCHING METHOD FOR FILM LAYER STRUCTURE, AND FILM LAYER STRUCTURE
(FR) PROCÉDÉ DE GRAVURE SÈCHE POUR STRUCTURE DE COUCHE DE FILM ET STRUCTURE DE COUCHE DE FILM
(ZH) 膜层结构的干法刻蚀方法及膜层结构
Abstract
(EN)
The present invention provides a dry etching method for a film layer structure, and a film layer structure. The dry etching method for a film layer structure comprises: S1, providing a substrate, and forming a thin film to be etched on the substrate; S2, coating the middle part of the thin film to be etched with a photoresist material; S3, performing dry etching on the thin film to be etched to form a step; and S4, performing ashing treatment on the thin film subjected to dry etching at step S3 to degrade a part of the photoresist.
(FR)
La présente invention concerne un procédé de gravure sèche pour une structure de couche de film et une structure de couche de film. Le procédé de gravure sèche pour une structure de couche de film comprend : S1, la fourniture d'un substrat et la formation d'un film mince à graver sur le substrat ; S2, l'application d'un matériau de résine photosensible sur la partie centrale du film mince à graver ; S3, la réalisation d'une gravure sèche sur le film mince à graver pour former un pas ; et S4, l'exécution d'un traitement de calcination sur le film mince qui a fait l'objet d'une gravure sèche à l'étape S3 pour dégrader une partie de la résine photosensible.
(ZH)
本发明提供一种膜层结构的干法刻蚀方法及膜层结构。膜层结构的干法刻蚀方法包括:S1、提供衬底,所述衬底上形成有需要被刻蚀的薄膜;S2、在所述需要被刻蚀的薄膜的中间部位涂覆光阻材料;S3、将所述需要被刻蚀的薄膜进行干法刻蚀,形成一个台阶;S4、将经过步骤S3干法刻蚀后的薄膜进行灰化处理,退化部分光阻。
Also published as
Latest bibliographic data on file with the International Bureau