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1. WO2021007938 - GOA DEVICE AND GATE DRIVE CIRCUIT

Publication Number WO/2021/007938
Publication Date 21.01.2021
International Application No. PCT/CN2019/104923
International Filing Date 09.09.2019
IPC
G09G 3/36 2006.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
34by control of light from an independent source
36using liquid crystals
CPC
G09G 3/3677
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix ; no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
34by control of light from an independent source
36using liquid crystals
3611Control of matrices with row and column drivers
3674Details of drivers for scan electrodes
3677suitable for active matrices only
Applicants
  • TCL华星光电技术有限公司 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 奚苏萍 XI, Suping
  • 王添鸿 WANG, Tianhong
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201910648472.018.07.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) GOA DEVICE AND GATE DRIVE CIRCUIT
(FR) DISPOSITIF GOA ET CIRCUIT D'ATTAQUE DE GRILLE
(ZH) GOA器件及栅极驱动电路
Abstract
(EN)
A GOA device and a gate drive circuit. The GOA device comprises at least two GOA units, wherein each of the GOA units comprises at least one pull-down maintenance unit, and the pull-down maintenance unit at least comprises a first thin-film transistor (100). The first thin-film transistor (100) comprises: a substrate (101), a first electrode (111) and a second electrode (112), wherein the potential of the first electrode (111) is different from the potential of the second electrode (112); and a third electrode (113), wherein the first electrode (111) or the second electrode (112) is electrically connected to the third electrode (113).
(FR)
L'invention concerne un dispositif GOA et un circuit d'attaque de grille. Le dispositif GOA comprend au moins deux unités GOA, chacune des unités GOA comprenant au moins une unité de maintien d'excursion basse, et l'unité de maintien d'excursion basse comprenant au moins un premier transistor à couches minces (100). Le premier transistor à couches minces (100) comprend : un substrat (101), une première électrode (111) et une deuxième électrode (112), le potentiel de la première électrode (111) étant différent du potentiel de la deuxième électrode (112) ; et une troisième électrode (113), la première électrode (111) ou la deuxième électrode (112) étant électriquement connectée à la troisième électrode (113).
(ZH)
一种GOA器件及栅极驱动电路,该GOA器件包括至少两个GOA单元,该GOA单元包括至少一下拉维持单元;该下拉维持单元至少包括第一薄膜晶体管(100)。该第一薄膜晶体管(100)包括衬底(101)、第一电极(111)、第二电极(112),该第一电极(111)的电位与该第二电极(112)的电位不同;以及第三电极(113),该第一电极(111)或该第二电极(112)与该第三电极(113)电连接。
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