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1. WO2021007017 - HYBRID MATCHING NETWORK TOPOLOGY

Publication Number WO/2021/007017
Publication Date 14.01.2021
International Application No. PCT/US2020/038899
International Filing Date 22.06.2020
IPC
H03H 7/40 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
7Multiple-port networks comprising only passive electrical elements as network components
38Impedance-matching networks
40Automatic matching of load impedance to source impedance
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
CPC
H01J 2237/24564
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
245Detection characterised by the variable being measured
24564Measurements of electric or magnetic variables, e.g. voltage, current, frequency
H01J 37/32183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
32183Matching circuits, impedance matching circuits per se H03H7/38 and H03H7/40
H03H 11/30
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
11Networks using active elements
02Multiple-port networks
28Impedance matching networks
30Automatic matching of source impedance to load impedance
H03H 7/40
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
7Multiple-port networks comprising only passive electrical elements as network components
38Impedance-matching networks
40Automatic matching of load impedance to source impedance
Applicants
  • COMET TECHNOLOGIES USA, INC. [US]/[US]
Inventors
  • OLIVETI, Anthony
  • POGHOSYAN, Tigran
Agents
  • NOLTE, N. Alexander
Priority Data
16/506,37309.07.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HYBRID MATCHING NETWORK TOPOLOGY
(FR) TOPOLOGIE DE RÉSEAU D'ADAPTATION HYBRIDE
Abstract
(EN)
The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.
(FR)
La présente invention concerne des systèmes de génération de plasma qui utilisent un plasma pour le traitement de semi-conducteurs. Le système de génération de plasma selon l'invention utilise un réseau d'adaptation hybride. Le système de génération de plasma comprend un générateur RF et un réseau d'adaptation. Le réseau d'adaptation comprend un premier étage pour effectuer des transformations d'impédance à faible Q pendant des variations à grande vitesse de l'impédance. Le réseau d'adaptation comprend un second étage pour effectuer une adaptation d'impédance pour des transformations d'impédance à Q élevé. Le réseau d'adaptation comprend en outre un capteur couplé au premier étage et au second étage pour calculer les signaux qui sont utilisés pour mettre en prise les premier et second étages. Le réseau d'adaptation comprend un réseau de premier étage qui est suffisamment agile pour accorder chaque état dans une forme d'onde RF modulée et un réseau de second étage pour accorder un état unique dans une forme d'onde modulée RF. Le système de génération de plasma comprend en outre une chambre de plasma couplée au réseau d'adaptation.
Also published as
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