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1. WO2021003884 - ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR

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Publication Number WO/2021/003884
Publication Date 14.01.2021
International Application No. PCT/CN2019/112221
International Filing Date 21.10.2019
IPC
H01L 21/84 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 2227/323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
323Multistep processes for AMOLED
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
H01L 27/127
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
127with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
Applicants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 柴国庆 CHAI, Guoqing
Agents
  • 深圳翼盛智成知识产权事务所（普通合伙） ESSEN PATENT&TRADEMARK AGENCY
Priority Data
201910615376.609.07.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR
(FR) SUBSTRAT DE MATRICE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 阵列基板及其制备方法
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Abstract
(EN)
An array substrate (100) and a preparation method therefor. The method for preparing the array substrate (100) comprises: advancing the execution of a conducting treatment of an active layer (120) before the stripping of a photoresist (150). In addition, in the preparation method, oxygen in the prior art is replaced with helium, such that the production efficiency is improved, the production cost is reduced, and the yield is high.
(FR)
L’invention concerne un substrat de matrice (100) et son procédé de préparation. Le procédé destiné à préparer le substrat de matrice (100) consiste : à avancer l’exécution d’un traitement conducteur d’une couche active (120) avant l’ablation d’un enduit photorésistant (150). Par ailleurs, selon le procédé de préparation, l’oxygène dans l’état de la technique est remplacé par de l’hélium, de sorte que le rendement de production est amélioré, que le coût de production est réduit, et que le rendement est élevé.
(ZH)
一种阵列基板（100）及其制备方法，所述阵列基板（100）的制备方法将有源层（120）的导体化处理提前至剥离光刻胶（150）前执行，并且该制备方法将现有技术中的氧气替换为氦气，提高了生产效率，减低了生产成本，且良品率高。
Also published as
CN110391186
US20210013329
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