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1. WO2021002141 - SUCTION DEVICE AND VACUUM PROCESS DEVICE

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Publication Number WO/2021/002141
Publication Date 07.01.2021
International Application No. PCT/JP2020/022121
International Filing Date 04.06.2020
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
C23C 14/50 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
50Substrate holders
C23C 16/458 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP]
Inventors
  • 阪上　弘敏 SAKAUE Hirotoshi
  • 大野　哲宏 OONO Tetsuhiro
Agents
  • 大森　純一 OMORI, Junichi
Priority Data
2019-12374202.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUCTION DEVICE AND VACUUM PROCESS DEVICE
(FR) DISPOSITIF D'ASPIRATION ET DISPOSITIF DE TRAITEMENT SOUS VIDE
(JA) 吸着装置及び真空処理装置
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Abstract
(EN)
In this suction device for cooling a substrate using a cooling gas, there is provided a technique for improving the cooling efficiency of the substrate by preventing a leak of the cooling gas. In the present invention, in a state in which a substrate 10 is not supported, raising and lowering members 15 are configured so that connection sections 15a are each disposed inside a guide section 53 of a guide through-hole 52, and substrate support sections 15b are each disposed inside an accommodation section 54 of the guide through-hole 52. O-rings 17 are provided between the connection sections 15a and the substrate support sections 15b of the raising and lowering members 15, the O-rings each sealing the accommodation section 54 of the guide through-hole 52 with respect to the guide section 53 by bringing the connection section 15a of each raising and lowering member 15 into close contact with a support wall section 55 provided to the accommodation section 54 of the guide through-hole 52, and supporting the connection section.
(FR)
La présente invention concerne un dispositif d'aspiration destiné à refroidir un substrat à l'aide d'un gaz de refroidissement, dans lequel il est proposé une technique pour améliorer l'efficacité de refroidissement du substrat en empêchant une fuite du gaz de refroidissement. Dans la présente invention, dans un état dans lequel un substrat (10) n'est pas supporté, des éléments d'élévation et d'abaissement (15) sont configurés de telle sorte que des sections de liaison (15a) sont chacune disposées à l'intérieur d'une section de guidage (53) d'un trou traversant de guidage (52), et des sections de support de substrat (15b) sont chacune disposées à l'intérieur d'une section de réception (54) du trou traversant de guidage (54). Des joints toriques (17) sont disposés entre les sections de liaison (15a) et les sections de support de substrat (15b) des éléments d'élévation et d'abaissement (15), les joints toriques scellant chacun la section de réception (54) du trou traversant de guidage (52) par rapport à la section de guidage (53) en amenant la section de liaison (15a) de chaque élément d'élévation et d'abaissement (15) en contact étroit avec une section de paroi de support (55) disposée sur la section de réception (54) du trou traversant de guidage (52) et supportant la section de liaison.
(JA)
冷却用ガスを用いて基板の冷却を行う吸着装置において、冷却用ガスの漏れを防止することによって基板の冷却効率を向上させる技術を提供する。本発明では、昇降部材１５が、基板１０を支持しない状態において、連結部１５ａが貫通ガイド孔５２のガイド部５３内に配置されるとともに、基板支持部１５ｂが貫通ガイド孔５２の収容部５４内に配置されるように構成されている。昇降部材１５の連結部１５ａと基板支持部１５ｂとの間に、昇降部材１５の連結部１５ａを貫通ガイド孔５２の収容部５４に設けた支持壁部５５と密着して支持することで貫通ガイド孔５２の収容部５４をガイド部５３に対して密閉するＯリング１７が設けられている。
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