Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021002115 - RANDOM NUMBER GENERATING UNIT AND COMPUTING SYSTEM

Publication Number WO/2021/002115
Publication Date 07.01.2021
International Application No. PCT/JP2020/020469
International Filing Date 25.05.2020
Chapter 2 Demand Filed 03.09.2020
IPC
H01F 10/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
C22C 38/00 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
38Ferrous alloys, e.g. steel alloys
B82Y 10/00 2011.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 25/00 2011.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
G06F 7/58 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
7Methods or arrangements for processing data by operating upon the order or content of the data handled
58Random or pseudo-random number generators
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
C22C 38/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
38Ferrous alloys, e.g. steel alloys
G06F 7/58
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
7Methods or arrangements for processing data by operating upon the order or content of the data handled
58Random or pseudo-random number generators
H01F 10/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
82controllable by variation of the magnetic field applied to the device
Applicants
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP]
Inventors
  • 深見 俊輔 FUKAMI Shunsuke
  • ボーダーズ ウィリアム アンドリュー BORDERS William Andrew
  • 舩津 拓也 FUNATSU Takuya
  • 金井 駿 KANAI Shun
  • 早川 佳祐 HAYAKAWA Keisuke
  • 大野 英男 OHNO Hideo
Agents
  • 楠 修二 KUSUNOKI Shuji
Priority Data
2019-12411303.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) RANDOM NUMBER GENERATING UNIT AND COMPUTING SYSTEM
(FR) UNITÉ DE GÉNÉRATION DE NOMBRE ALÉATOIRE ET SYSTÈME INFORMATIQUE
(JA) 乱数発生ユニット及びコンピューティングシステム
Abstract
(EN)
[Problem] To provide a random number generating unit and a computing system using the same, the random number generating unit comprising a magnetic tunnel junction element and enabling development of characteristics required for execution of probabilistic information processing and an increase in operating speed. [Solution] A magnetic tunnel junction element 10 comprises: a fixed layer 12 comprising a ferromagnet and having a substantially fixed magnetization direction; a free layer 14 comprising a ferromagnet and having a magnetization direction which varies with a first time constant; and a barrier layer 13 configured of an insulator and disposed between the free layer 14 and the fixed layer 12. In the magnetic tunnel junction element 10, the absolute value of a shift magnetic field is not more than 20 millitesla. The fixed layer 12 includes a plurality of ferromagnetic layers and non-magnetic coupling layers stacked one upon another, wherein the magnetizations of those of the ferromagnetic layers that are adjacent to each other are coupled by a non-magnetic coupling layer in an antiparallel manner.
(FR)
Le problème décrit par la présente invention est de réaliser une unité de génération de nombre aléatoire et un système informatique l'utilisant, l'unité de génération de nombre aléatoire comprenant un élément de jonction tunnel magnétique et permettant le développement de caractéristiques requises pour l'exécution d'un traitement d'informations probabilistes et une augmentation de la vitesse de fonctionnement. La solution selon l'invention porte sur un élément de jonction tunnel magnétique (10) qui comprend : une couche fixe (12) comprenant un ferro-aimant et ayant une direction de magnétisation sensiblement fixe; une couche libre (14) comprenant un ferro-aimant et ayant une direction de magnétisation qui varie avec une première constante de temps; et une couche barrière (13) constituée d'un isolant et disposée entre la couche libre (14) et la couche fixe (12). Dans l'élément de jonction tunnel magnétique (10), la valeur absolue d'un champ magnétique de décalage n'est pas supérieure à 20 millitesla. La couche fixe (12) comprend une pluralité de couches ferromagnétiques et des couches de couplage non magnétiques empilées les unes sur les autres, les magnétisations de celles des couches ferromagnétiques qui sont adjacentes entre elles étant couplées par une couche de couplage non magnétique de manière antiparallèle.
(JA)
【課題】確率論的情報処理の実行に求められる特性を発現可能で、動作速度を向上させることができる、磁気トンネル接合素子からなる乱数発生ユニット、及びそれを用いたコンピューティングシステムを提供する。 【解決手段】磁気トンネル接合素子10が、強磁性体を有し磁化方向が実質的に固定された固定層12と、強磁性体を有し磁化方向が第一の時定数で変化する自由層14と、絶縁体で構成され自由層14と固定層12との間に配置されるバリア層13とを有している。磁気トンネル接合素子10は、シフト磁界の絶対値が20ミリテスラ以下である。固定層12は、互いに積層された複数の強磁性層と非磁性結合層とを有し、かつ、各強磁性層のうち隣り合う強磁性層の磁化が非磁性結合層によって反平行に結合されている。
Latest bibliographic data on file with the International Bureau