Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021001084 - SEMICONDUCTOR DEVICE

Publication Number WO/2021/001084
Publication Date 07.01.2021
International Application No. PCT/EP2020/061972
International Filing Date 29.04.2020
IPC
H01L 23/482 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
H01L 23/34 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 23/495 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
495Lead-frames
H01L 23/488 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
H01L 23/544 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
544Marks applied to semiconductor devices, e.g. registration marks, test patterns
Applicants
  • INFINEON TECHNOLOGIES AUSTRIA AG [AT]/[AT]
Inventors
  • KAHRIMANOVIC, Elvir
  • NOEBAUER, Gerhard
  • BLANK, Oliver
  • FERRARA, Alessandro
Agents
  • JENSEN & SON
Priority Data
19184547.804.07.2019EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
Abstract
(EN)
In some embodiments, a semiconductor device comprises a semiconductor die comprising a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a second surface opposing the first surface. A first metallization structure is located on the first surface and comprises at least one source pad coupled to the source electrode, at least one drain pad coupled to the drain electrode and at least one gate pad coupled to the gate electrode. A second metallization structure is located on the second surface and comprises a conductive structure and an electrically insulating layer and forms an outermost surface of the semiconductor device. The outermost surface of the second metallization structure is electrically insulated from the semiconductor die by the electrically insulating layer.
(FR)
Selon certains modes de réalisation, l'invention concerne un dispositif à semi-conducteur comprenant une puce de semi-conducteur comprenant un dispositif de transistor vertical comportant une électrode source, une électrode drain et une électrode grille, la puce de semi-conducteur comportant une première surface et une seconde surface opposée à la première surface. Une première structure de métallisation est située sur la première surface et comprend au moins un plot de source couplé à l'électrode source, au moins un plot de drain couplé à l'électrode drain et au moins un plot de grille couplé à l'électrode grille. Une seconde structure de métallisation est située sur la seconde surface et comprend une structure conductrice et une couche électriquement isolante et forme une surface la plus à l'extérieur du dispositif à semi-conducteur. La surface la plus à l'extérieur de la seconde structure de métallisation est électriquement isolée de la puce à semi-conducteur par la couche électriquement isolante.
Also published as
Latest bibliographic data on file with the International Bureau