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1. WO2020247230 - METHOD FOR NON-CONTACT LOW SUBSTRATE TEMPERATURE MEASUREMENT

Publication Number WO/2020/247230
Publication Date 10.12.2020
International Application No. PCT/US2020/034852
International Filing Date 28.05.2020
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01J 5/00 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
H01L 21/677 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
CPC
G01J 2005/0077
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
0077Imaging
G01J 2005/0085
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
0081Thermography
0085Temperature profile
G01J 5/00
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
H01L 21/67248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67248Temperature monitoring
H04N 5/33
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
33Transforming infra-red radiation
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • VELLORE, Kim Ramkumar
  • TERTITSKI, Leonid M.
  • SCOTNEY-CASTLE, Matthew D.
Agents
  • DOUGHERTY, Chad M.
Priority Data
62/856,49603.06.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR NON-CONTACT LOW SUBSTRATE TEMPERATURE MEASUREMENT
(FR) PROCÉDÉ DE MESURE DE BASSE TEMPÉRATURE DE SUBSTRAT SANS CONTACT
Abstract
(EN)
A method and apparatus for measuring a temperature of a substrate located in a semiconductor processing environment is disclosed. The substrate has a top surface and an edge surface, and is positioned in a prescribed location within the semiconductor processing environment. An infrared camera oriented to view one side of the edge surface of the substrate is triggered to obtain an infrared image of the one side of the edge surface of the substrate. The infrared image is processed to obtain a temperature profile of the substrate.
(FR)
L'invention concerne un procédé et un appareil pour mesurer une température d'un substrat situé dans un environnement de traitement de semi-conducteur. Le substrat a une surface supérieure et une surface de bord, et est positionné dans un emplacement prescrit à l'intérieur de l'environnement de traitement de semi-conducteur. Une caméra infrarouge orientée pour visualiser un côté de la surface de bord du substrat est déclenchée pour obtenir une image infrarouge d'un côté de la surface de bord du substrat. L'image infrarouge est traitée pour obtenir un profil de température du substrat.
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