Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020245100 - METHOD FOR PRODUCING A CONNECTION REGION ON A SUBSTRATE FOR AN ELECTRICAL ASSEMBLY AND SUBSTRATE FOR SAME

Publication Number WO/2020/245100
Publication Date 10.12.2020
International Application No. PCT/EP2020/065171
International Filing Date 02.06.2020
IPC
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/488 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
CPC
H01L 2224/27005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
27001Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
27005for aligning the layer connector, e.g. marks, spacers
H01L 2224/27013
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
27013for holding or confining the layer connector, e.g. solder flow barrier
H01L 2224/27015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
27015for aligning the layer connector, e.g. marks, spacers
H01L 2224/2731
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
273by local deposition of the material of the layer connector
2731in liquid form
H01L 2224/2747
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
2747using a lift-off mask
H01L 2224/2748
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
2747using a lift-off mask
2748Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
Applicants
  • SIEMENS AKTIENGESELLSCHAFT [DE]/[DE]
Inventors
  • WORMUTH, Dirk
  • JESKE, Nora
Priority Data
10 2019 208 330.707.06.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINES VERBINDUNGS-BEREICHS AUF EINEM SUBSTRAT FÜR EINE ELEKTRISCHE BAUGRUPPE UND SUBSTRAT DAZU
(EN) METHOD FOR PRODUCING A CONNECTION REGION ON A SUBSTRATE FOR AN ELECTRICAL ASSEMBLY AND SUBSTRATE FOR SAME
(FR) PROCÉDÉ POUR PRODUIRE UNE ZONE DE CONNEXION SUR UN SUBSTRAT POUR UN MODULE ÉLECTRIQUE ET SUBSTRAT CORRESPONDANT
Abstract
(DE)
In einem Verfahren zur Herstellung eines Verbindungs-Bereichs (1), insbesondere eines elektrisch und/oder Wärme-leitenden Bereichs, auf einem Substrat (2), der als Untergrund für ein elektrisches Bauelement (6), insbesondere eine leistungselektronische Baugruppe, dient, wird eine Form (3) auf dem Substrat (2) erzeugt, die nach oben hin offen ist und zur Aufnahme einer Flüssigkeit (4) geeignet ist, und dann wird ein elektrisch leitfähiger Hilfsstoff (4), beispielsweise eine Sinterpaste, in die Form (3) in niedrig viskosem Zustand (z.B., nach geeigneter Lösungsmittelzugabe die gebräuchlichen elektrisch und/ oder Wärme-leitenden Hilfsstoffe, wie z.B. Lotpaste oder Sinterpaste) eingebracht. Die Form (3) kann durch Aufsetzen eines Rahmens (5) aus z.B. Metall oder Kunststoff auf das Substrat (2) oder durch Erzeugung einer Kavität in dem Substrat (2) gebildet werden, oder die Herstellung der Form (3) kann durch strukturierte Beschichtung des Substrats (2) mit einem Lack, durch generative Fertigungsverfahren (mittels 3D-Drucker) oder durch Abkleben eines Bereichs auf dem Substrat (2) mit einem Klebeband erfolgen. Der niedrig viskose und elektrisch und/oder Wärme-leitfähige Hilfsstoff (4) kann nach dem Einbringen in die Form (3) getrocknet, insbesondere in waagrechter Lagerung, werden. Der Rahmen (5) kann nach dem Trocknen des niedrig viskosen und elektrisch leitfähigen Hilfsstoffes (4) vom Substrat (2) wieder entfernt werden. Dadurch kann das elektrisch und/oder Wärme-leitfähige Hilfsstoff (4) auf das Substrat (2) in einer Weise aufgebracht werden, die eine möglichst plane und/oder parallele Oberfläche zur Substratoberfläche gewährleistet, wobei der Hilfsstoff (4) so aufgebracht wird, dass er eine möglichst homogene Verteilung aufweist. Damit kann ein Verlaufen und/oder Unebenheiten bei der Bildung von Verbindungs-Bereichen auf Substraten wie Schaltungsträgern durch einfache mechanische Maßnahmen, wie die Bildung der Form (3) und die Verflüssigung der Sinterpaste (4), vermieden werden.
(EN)
In a method for producing a connection region (1), in particular an electrically and/or thermally conductive region, on a substrate (2) acting as a subsurface for an electrical component (6), in particular a power electronics assembly, a mould (3), which is open at the top and suitable for receiving a liquid (4), is created on the substrate (2) and an electrically conductive auxiliary agent (4), for example a sinter paste with low viscosity (e.g. achieved by the addition of suitable solvents to conventional electrically and/or thermally conductive auxiliary agents such as solder paste or sinter paste), is then introduced into the mould. The mould (3) can be formed by placing a frame (5), e.g. consisting of metal or plastics onto the substrate (2), or by creating a cavity in the substrate (2), or the mould (3) can be produced by a structured coating of the substrate (2) with a paint, by additive manufacturing methods (using 3D printers), or by masking off a region on the substrate (2) using adhesive tape. The low-viscosity electrically and/or thermally conductive auxiliary agent (4) can be dried after being introduced into the mould (3), in particular in a horizontal position. The frame (5) can be removed from the substrate (2) once the low-viscosity electrically and/or thermally conductive auxiliary agent (4) has dried. The electrically and/or thermally conductive auxiliary agent (4) can thus be applied to the substrate (2) such that a surface that is as flat and/or as parallel to the substrate surface as possible is guaranteed, the auxiliary agent (4) being applied so as to be as uniformly distributed as possible. Spreading and/or unevenness in the formation of connection regions on substrates, such as circuit carriers, can thus be prevented using simple mechanical measures, such as the formation of a mould (3) and the liquefaction of the sinter paste (4).
(FR)
L'invention concerne un procédé pour produire une zone de connexion (1), notamment une zone thermoconductrice et/ou électroconductrice, sur un substrat (2), servant de base pour un composant électrique, notamment un composant électronique de puissance. Selon le procédé, un moule (3) est produit sur le substrat (2), celui-ci étant ouvert vers le haut et servant à recevoir un liquide (4); un agent auxiliaire électroconducteur (4), par exemple une pâte de frittage, est introduit dans le moule (3) dans un état peu visqueux (par exemple après addition adéquate de solvants aux agents auxiliaires thermoconducteurs et/ou électroconducteurs usuels, par exemple une pâte de soudage ou une pâte de frittage). Le moule (3) peut être formé par application d'un cadre (5) en métal ou en plastique par exemple ou par production d'une cavité dans le substrat (2), ou la formation du moule (3) peut être réalisée par revêtement structural du substrat (2) avec un vernis, par des procédés de fabrication additive (au moyen d'une imprimante 3D), ou par application d'une bande adhésive sur une zone du substrat (2). L'agent auxiliaire (4) peu visqueux et thermoconducteur et/ou électroconducteur peut être séché après introduction dans le moule (3), notamment verticalement. Le cadre peut être retiré du substrat après séchage de l'agent auxiliaire (4) peu visqueux et thermoconducteur et/ou électroconducteur. L'agent auxiliaire (4) peu visqueux et thermoconducteur et/ou électroconducteur peut être appliqué sur le substrat (2) d'une manière garantissant une surface plane et/ou parallèle par rapport à la surface du substrat, l'agent (4) étant appliqué de manière à présenter une distribution la plus homogène possible. La présente invention permet d'empêcher un écoulement et/ou des irrégularités lors de la formation de zones de connexion sur des substrats, telles que des porte-circuits, au moyen de mesures mécaniques simples, telles que la formation du moule (3) et la fluidification de la pâte de frittage (4).
Also published as
Latest bibliographic data on file with the International Bureau