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1. WO2020230443 - PIEZOELECTRIC DEVICE

Publication Number WO/2020/230443
Publication Date 19.11.2020
International Application No. PCT/JP2020/011693
International Filing Date 17.03.2020
IPC
H01L 41/047 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive elements
047Electrodes
H01L 41/09 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
09with electrical input and mechanical output
H01L 41/187 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
CPC
H01L 41/0471
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive devices
047Electrodes ; or electrical connection arrangements
0471Individual layer electrodes of multilayer piezo-electric or electrostrictive devices, e.g. internal electrodes
H01L 41/0815
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
0805based on piezo-electric or electrostrictive films or coatings
081characterised by the underlying base, e.g. substrates
0815Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
H01L 41/0973
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
09with electrical input and mechanical output ; , e.g. actuators, vibrators
0926using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
0973Membrane type
H01L 41/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
H01L 41/313
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
313by metal fusing or with adhesives
H03H 2003/023
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
023the resonators or networks being of the membrane type
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 鈴木 勝之 SUZUKI, Masayuki
  • 池内 伸介 IKEUCHI, Shinsuke
  • 黒川 文弥 KUROKAWA, Fumiya
  • 岸本 諭卓 KISHIMOTO, Yutaka
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2019-09268016.05.2019JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) PIEZOELECTRIC DEVICE
(FR) DISPOSITIF PIÉZOÉLECTRIQUE
(JA) 圧電デバイス
Abstract
(EN) A membrane part (120) includes a single crystal piezoelectric layer (130), an upper electrode layer (140), and a lower electrode layer (150). The upper electrode layer (140) is disposed on a first surface (131). The lower electrode layer (150) is disposed on a second surface (132) so as to face at least a portion of the upper electrode layer (140) with the single crystal piezoelectric layer (130) interposed therebetween. The single crystal piezoelectric layer (130) has a plurality of piezoelectric cleavage directions (Cp), each defined as a direction that extends along a boundary between a cleavage plane that is created when the single crystal piezoelectric layer (130) is cleaved and the first surface (131). When seen from the up-down direction, at least a portion of an upper electrode outer edge (140E) which is the outer edge of the upper electrode layer (140) and at least a portion of a lower electrode outer edge (140E) which is the outer edge of the lower electrode layer (150) are positioned nonparallel to at least one direction of the plurality of piezoelectric cleavage directions (Cp).
(FR) L'invention concerne une partie membrane (120) comprenant une couche piézoélectrique monocristalline (130), une couche d'électrode supérieure (140), et une couche d'électrode inférieure (150). La couche d'électrode supérieure (140) est disposée sur une première surface (131). La couche d'électrode inférieure (150) est disposée sur une seconde surface (132) de manière à faire face à au moins une partie de la couche d'électrode supérieure (140) avec la couche piézoélectrique monocristalline (130) intercalée entre elles. La couche piézoélectrique monocristalline (130) a une pluralité de directions de clivage piézoélectriques (Cp), chacune étant définie comme une direction qui s'étend le long d'une délimitation entre un plan de clivage qui est créé lorsque la couche piézoélectrique monocristalline (130) est clivée et la première surface (131). Vu depuis la direction haut-bas, au moins une partie d'un bord externe d'électrode supérieure (140E) qui est le bord externe de la couche d'électrode supérieure (140) et au moins une partie d'un bord externe d'électrode inférieure (140E) qui est le bord externe de la couche d'électrode inférieure (150) sont positionnées de manière non parallèle à au moins une direction de la pluralité de directions de clivage piézoélectriques (Cp).
(JA) メンブレン部(120)は、単結晶圧電体層(130)と、上部電極層(140)と、下部電極層(150)とを含んでいる。上部電極層(140)は、第1面(131)に配置されている。下部電極層(150)は、単結晶圧電体層(130)を挟んで上部電極層(140)の少なくとも一部に対向するように第2面(132)に配置されている。単結晶圧電体層(130)は、単結晶圧電体層(130)が劈開した場合に生じる劈開面と第1面(131)との境界線に沿って延びる方向として規定される、複数の圧電体劈開方向(Cp)を有している。上下方向から見たときに、上部電極層(140)の外縁である上部電極外縁(140E)の少なくとも一部および下部電極層(150)の外縁である下部電極外縁(140E)の少なくとも一部が、複数の圧電体劈開方向(Cp)のうちの少なくとも一方向に対して非平行に位置している。
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