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1. WO2020229617 - RADIATION-EMITTING SEMICONDUCTOR CHIP AND RADIATION-EMITTING COMPONENT

Publication Number WO/2020/229617
Publication Date 19.11.2020
International Application No. PCT/EP2020/063506
International Filing Date 14.05.2020
IPC
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 33/145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
145with a current-blocking structure
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • TANGRING, Ivar
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2019 112 949.416.05.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) STRAHLUNGSEMITTIERENDER HALBLEITERCHIP UND STRAHLUNGSEMITTIERENDES BAUTEIL
(EN) RADIATION-EMITTING SEMICONDUCTOR CHIP AND RADIATION-EMITTING COMPONENT
(FR) PUCE SEMI-CONDUCTRICE ÉMETTRICE DE RAYONNEMENT ET COMPOSANT ÉMETTEUR DE RAYONNEMENT
Abstract
(DE)
Es wird ein strahlungsemittierender Halbleiterchip (1) angegeben, mit: - einem Halbleiterkörper (2), umfassend eine erste Schichtenfolge (4) eines ersten Leitfähigkeitstyps und eine zweite Schichtenfolge (6) eines vom ersten Leitfähigkeitstyp verschiedenen zweiten Leitfähigkeitstyps, - zumindest einem ersten Kontaktsteg (14), der zur Einprägung von Strom in die erste Schichtenfolge (4) ausgebildet ist, und - zumindest zwei zweiten Kontaktstegen (15), die zur Einprägung von Strom in die zweite Schichtenfolge (6) ausgebildet sind, wobei - der erste Kontaktsteg (14) parallel zu den zweiten Kontaktstegen (15) angeordnet ist, - der erste Kontaktsteg (14) und die zweiten Kontaktstege (15) alternierend angeordnet sind, und - der erste Kontaktsteg (14) breiter ist als einer der zweiten Kontaktstege (15), und/oder - Abstände des ersten Kontaktstegs (14) zu den zweiten Kontaktstegen (15) verschieden sind. Weiterhin wird ein strahlungsemittierendes Bauteil (33) angegeben.
(EN)
The invention relates to a radiation-emitting semiconductor chip (1), having: - a semiconductor body (2), comprising a first layer sequence (4) of a first conductivity type and a second layer sequence (6) of a second conductivity type different from the first conductivity type; - at least one first contact rib (14), which is designed to impress current into the first layer sequence (4); and - at least two second contact ribs (15), which are designed to impress current into the second layer sequence (6), wherein: - the first contact rib (14) is arranged parallel to the second contact ribs (15); - the first contact rib (14) and the second contact ribs (15) are arranged in an alternating manner; and - the first contact rib (14) is wider than one of the second contact ribs (15), and/or - distances from the first contact rib (14) to the second contact ribs (15) are different. The invention also relates to a radiation-emitting component (33).
(FR)
La présente invention concerne une puce semi-conductrice émettrice de rayonnement (1), pourvue de : - un corps semi-conducteur (2), comportant une première série de couches (4) d’un premier type de conductivité et une seconde série de couches (6) d’un second type de conductivité différent du premier type de conductivité, - au moins un premier barreau de contact (14) qui est formé pour injecter du courant dans la première série de couches (4), et - au moins deux seconds barreaux de contact (15) qui sont formés pour injecter du courant dans la seconde série de couches (6), - le premier barreau de contact (14) étant disposé parallèle aux seconds barreaux de contact (15), - le premier barreau de contact (14) et les seconds barreaux de contact (15) sont disposés en alternance, et - le premier barreau de contact (14) est plus large qu’un des seconds barreaux de contact (15), et/ou - des distances du premier barreau de contact (14) aux seconds barreaux de contact (15) sont différentes. La présente invention concerne en outre un composant semi-conducteur émettant un rayonnement (33) correspondant.
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