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1. WO2020228832 - COMPOSITE INTERFACE TRANSPORT MATERIAL-BASED PEROVSKITE PHOTOVOLTAIC, LIGHT EMISSION AND LIGHT DETECTION MULTI-FUNCTIONAL DEVICE AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/228832
Publication Date 19.11.2020
International Application No. PCT/CN2020/090745
International Filing Date 18.05.2020
IPC
H01L 51/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
48Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/54 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
54Selection of materials
H01L 51/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/46 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
46Selection of materials
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
H01L 2251/301
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01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
30Materials
301Inorganic materials
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/426
HELECTRICITY
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LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4253comprising bulk hetero-junctions, e.g. interpenetrating networks
426comprising inorganic nanostructures, e.g. CdSe nanoparticles
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/506
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5048Carrier transporting layer
5056Hole transporting layer
506comprising a dopant
Applicants
  • 华南理工大学 SOUTH CHINA UNIVERSITY OF TECHNOLOGY [CN]/[CN]
Inventors
  • 严克友 YAN, Keyou
  • 谢江生 XIE, Jiangsheng
Agents
  • 广州粤高专利商标代理有限公司 YOGO PATENT & TRADEMARK AGENCY LIMITED COMPANY
Priority Data
201910406992.016.05.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) COMPOSITE INTERFACE TRANSPORT MATERIAL-BASED PEROVSKITE PHOTOVOLTAIC, LIGHT EMISSION AND LIGHT DETECTION MULTI-FUNCTIONAL DEVICE AND PREPARATION METHOD THEREFOR
(FR) DISPOSITIF MULTIFONCTIONNEL DE DÉTECTION DE LUMIÈRE ET D'ÉMISSION DE LUMIÈRE, PHOTOVOLTAÏQUE, PÉROVSKITE, À BASE DE MATÉRIAU DE TRANSPORT D'INTERFACE COMPOSITE, ET PROCÉDÉ DE PRÉPARATION S'Y RAPPORTANT
(ZH) 一种基于复合界面传输材料的钙钛矿光伏-发光-光探测多功能器件及其制备方法
Abstract
(EN)
A composite interface transport material-based perovskite photovoltaic, light emission and light detection multi-functional device and a preparation method therefor. The multi-functional device comprises a transparent conductive glass, a composite electron transport layer, a perovskite active layer, a composite hole transport layer and a metal electrode layer which are sequentially arranged in a stacked manner from bottom to top. The work functions of the interface transport layers are adjusted by means of the multi-element interface transport materials, so that the work functions of the electron transport layer and the hole transport layer are respectively levelled with conduction band and valence band positions of the perovskite active layer. According to experiment result comparisons, the photoelectric conversion efficiency and the luminous efficiency of the perovskite multi-functional device, after energy band regulation, are significantly increased.
(FR)
L'invention concerne un dispositif multifonctionnel de détection de lumière et d'émission de lumière, photovoltaïque, pérovskite, à base de matériau de transport d'interface composite et son procédé de préparation. Le dispositif multifonctionnel comprend un verre conducteur transparent, une couche de transport d'électrons composite, une couche active de pérovskite, une couche de transport de trous composite et une couche d'électrode métallique qui sont séquentiellement agencées de manière empilée de bas en haut. Les fonctions de travail des couches de transport d'interface sont réglées au moyen des matériaux de transport d'interface à éléments multiples, de sorte que les fonctions de travail de la couche de transport d'électrons et de la couche de transport de trous sont respectivement nivelées avec des positions de bande de conduction et de bande de valence de la couche active de pérovskite. En fonction de comparaisons de résultats d'expérience, le rendement de conversion photoélectrique et l'efficience lumineuse du dispositif multifonctionnel de pérovskite, après régulation d'une bande d'énergie, sont significativement augmentés.
(ZH)
一种基于复合界面传输材料的钙钛矿光伏-发光-光探测多功能器件及其制备方法。所述多功能器件包括从下至上依次层叠设置的透明导电玻璃、复合电子传输层、钙钛矿活性层、复合空穴传输层和金属电极层。利用多元界面传输材料的复合调整界面传输层的功函数,让电子传输层和空穴传输层的功函数分别与钙钛矿活性层的导带和价带位置拉平。经实验结果对比,能带调控后的钙钛矿多功能器件光电转换效率和发光效率都有了明显的提升。
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