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1. WO2020228070 - TFT ARRAY SUBSTRATE AND FABRICATION METHOD THEREFOR

Publication Number WO/2020/228070
Publication Date 19.11.2020
International Application No. PCT/CN2019/089831
International Filing Date 03.06.2019
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
CPC
H01L 27/1218
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1218with a particular composition or structure of the substrate
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 27/1262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1262with a particular formation, treatment or coating of the substrate
Applicants
  • 深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 夏慧 XIA, Hui
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY
Priority Data
201910400628.315.05.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TFT ARRAY SUBSTRATE AND FABRICATION METHOD THEREFOR
(FR) SUBSTRAT MATRICIEL DE TFT ET SON PROCÉDÉ DE FABRICATION
(ZH) TFT阵列基板及其制造方法
Abstract
(EN)
A TFT array substrate and a fabrication method therefor, the TFT array substrate comprising a substrate (10) and a film layer structure disposed on the substrate (10); the film layer structure comprises a first metal layer and a second metal layer located above the first metal layer, the orthographic projections of first portions (24) of the first metal layer on the substrate (10) overlap with orthographic projections of second portions (53) of the second metal layer on the substrate (10), and grooves (11) are disposed at positions corresponding to the first portions (24) and the second portions (53) on the substrate (10).
(FR)
L'invention concerne un substrat matriciel de TFT et son procédé de fabrication, le substrat matriciel de TFT comprenant un substrat (10) et une structure de couche de film disposée sur le substrat (10) ; la structure de couche de film comprend une première couche métallique et une seconde couche métallique située au-dessus de la première couche métallique, les projections orthographiques de premières parties (24) de la première couche métallique sur le substrat (10) se chevauchent avec des projections orthographiques de secondes parties (53) de la seconde couche métallique sur le substrat (10), et des rainures (11) sont disposées à des positions correspondant aux premières parties (24) et aux secondes parties (53) sur le substrat (10).
(ZH)
一种TFT阵列基板及其制造方法,TFT阵列基板包括基板(10)和设置于基板(10)上的膜层结构;其中,膜层结构包括第一金属层和位于第一金属层上方的第二金属层,第一金属层的第一部分(24)在基板(10)上的正投影与第二金属层的第二部分(53)在所述基板(10)上的正投影重合,基板(10)上与第一部分(24)和第二部分(53)对应的位置处设置有凹槽(11)。
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