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1. WO2020225973 - SINGLE SURFACE POLISHING METHOD

Publication Number WO/2020/225973
Publication Date 12.11.2020
International Application No. PCT/JP2020/010136
International Filing Date 10.03.2020
IPC
B24B 37/015 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
015Temperature control
B24B 37/12 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
12Lapping plates for working plane surfaces
B24B 49/14 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
14taking regard of the temperature during grinding
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 鈴木 健汰 SUZUKI Kenta
  • 大関 正彬 OSEKI Masaaki
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
Priority Data
2019-08930609.05.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SINGLE SURFACE POLISHING METHOD
(FR) PROCÉDÉ DE POLISSAGE DE SURFACE UNIQUE
(JA) 片面研磨方法
Abstract
(EN)
The present invention is a single surface polishing method using a polishing pad to polish a wafer surface, the single surface polishing method being characterized by comprising: monitoring a change in the polishing pad temperature; polishing the wafer surface from the polishing start time under a first condition; and at a time point when the change in the polishing pad temperature changes from rising to falling, switching from the first condition to a second condition to polish the wafer surface. In this manner, edge roll-off can be suppressed by accurately detecting that a natural oxide film has been removed.
(FR)
La présente invention concerne un procédé de polissage de surface unique utilisant un tampon de polissage pour polir une surface de tranche, le procédé de polissage de surface unique étant caractérisé en ce qu'il comprend : la surveillance d'un changement de la température du tampon de polissage ; le polissage de la surface de la tranche à partir du temps de début de polissage dans une première condition ; et à un moment où le changement dans la température du tampon de polissage passe d'une augmentation à une diminution, la commutation de la première condition à une seconde condition pour polir la surface de la tranche. De cette manière, le décollement de bord peut être supprimé en détectant avec précision qu'un film d'oxyde naturel a été retiré.
(JA)
本発明は、研磨パッドを用いてウェーハの表面の研磨を行う片面研磨方法であって、前記研磨パッドの温度変化をモニタリングし、前記研磨の開始時から第1の条件で前記ウェーハの表面を研磨し、前記研磨パッドの温度変化が上昇から下降に変化した時点で、前記第1の条件から第2の条件に切り替えて前記ウェーハの表面を研磨することを特徴とする片面研磨方法である。これにより、自然酸化膜が除去されたことを正確に検出してエッジロールオフを抑えることができる。
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