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1. WO2020224474 - TFT BACKPLANE AND PREPARATION METHOD THEREFOR, AND DISPLAY PANEL

Publication Number WO/2020/224474
Publication Date 12.11.2020
International Application No. PCT/CN2020/087268
International Filing Date 27.04.2020
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
CPC
H01L 27/1229
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1229with different crystal properties within a device or between different devices
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
H01L 27/1274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
127with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
1274using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
H01L 27/3262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
326special geometry or disposition of pixel-elements
3262of TFT
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 北京京东方技术开发有限公司 BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. [CN]/[CN]
Inventors
  • 程鸿飞 CHENG, Hongfei
Agents
  • 北京中博世达专利商标代理有限公司 BEIJING ZBSD PATENT&TRADEMARK AGENT LTD.
Priority Data
201910368484.805.05.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TFT BACKPLANE AND PREPARATION METHOD THEREFOR, AND DISPLAY PANEL
(FR) FOND DE PANIER TFT ET SON PROCÉDÉ DE PRÉPARATION, ET PANNEAU D'AFFICHAGE
(ZH) TFT背板及其制备方法、显示面板
Abstract
(EN)
Disclosed is a TFT backplane provided with a plurality of sub-pixel regions. The TFT backplane comprises: a base, and a plurality of pixel driving circuits provided at a side of the base. One pixel driving circuit is provided in one sub-pixel region, wherein the pixel driving circuit comprises a switch transistor and a drive transistor. The switch transistor comprises: a first active layer, a first source electrode, and a first drain electrode, wherein the first active layer comprises a first polysilicon channel portion and an amorphous silicon portion, and the first source electrode and the first drain electrode are respectively electrically connected to the amorphous silicon portion. The drive transistor comprises a second active layer, wherein the material of the second active layer comprises a polysilicon material, and the second active layer and the first active layer are arranged on the same layer.
(FR)
L'invention concerne un fond de panier TFT comportant une pluralité de régions de sous-pixel. Le fond de panier TFT comprend : une base, et une pluralité de circuits d'attaque de pixel disposés sur un côté de la base. Un circuit d'attaque de pixel est disposé dans une région de sous-pixel, le circuit d'attaque de pixel comprenant un transistor de commutation et un transistor d'attaque. Le transistor de commutation comprend : une première couche active, une première électrode de source et une première électrode de drain, la première couche active comprenant une première partie de canal de polysilicium et une partie de silicium amorphe, et la première électrode de source et la première électrode de drain sont respectivement connectées électriquement à la partie de silicium amorphe. Le transistor d'attaque comprend une seconde couche active, le matériau de la seconde couche active comprenant un matériau de polysilicium, et la seconde couche active et la première couche active étant disposées sur la même couche.
(ZH)
一种TFT背板具有多个亚像素区域。所述TFT背板包括:衬底;以及设置在所述衬底一侧的多个像素驱动电路。一个亚像素区域中设置有一个像素驱动电路。其中,所述像素驱动电路包括开关晶体管和驱动晶体管。所述开关晶体管包括:第一有源层、第一源极和第一漏极。所述第一有源层包括第一多晶硅沟道部分和非晶硅部分,所述第一源极和所述第一漏极分别与所述非晶硅部分电连接。所述驱动晶体管包括第二有源层,所述第二有源层的材料包括多晶硅材料。所述第二有源层与所述第一有源层同层设置。
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