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1. WO2020222764 - GROUND STRAP ASSEMBLIES

Publication Number WO/2020/222764
Publication Date 05.11.2020
International Application No. PCT/US2019/029711
International Filing Date 29.04.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • SHAO, Shouqian
  • SU, Zonghui
  • ZHAO, Lai
  • ZHOU, Jianhua
  • PENG, Fei
Agents
  • PATTERSON, B. Todd
  • DOUGHERTY, Chad M.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) GROUND STRAP ASSEMBLIES
(FR) ENSEMBLES SANGLE DE MISE À LA TERRE
Abstract
(EN)
The present disclosure relates to methods and apparatus for plasma processing a substrate. In one embodiment, a substrate processing chamber includes a ground strap assembly. The ground strap assembly includes a ground strap and one or more connectors coupled to the substrate support and/or chamber body. Each connector has a first clamp member and a second clamp member. The ground strap is fastened between the first and second clamp members of each connector. An inner surface of each first and second clamp member couples to the ground strap and is coated with a dielectric coating. Modulation of the thickness and roughness of the inner surfaces enables tuning of the capacitance characteristics of the connectors
(FR)
La présente invention concerne des procédés et appareils pour le traitement au plasma d'un substrat. Selon un mode de réalisation, la chambre de traitement de substrat comprend un ensemble sangle de mise à la terre. L'ensemble sangle de mise à la terre comprend une sangle de mise à la terre et un ou plusieurs connecteurs couplés au support de substrat et/ou au corps de chambre. Chaque connecteur comprend un premier élément de serrage et un second élément de serrage. La sangle de mise à la terre est fixée entre les premier et second éléments de serrage de chaque connecteur. Une surface interne de chaque premier et second élément de serrage est couplée à la sangle de mise à la terre et est revêtue d'un revêtement diélectrique. La modulation de l'épaisseur et de la rugosité des surfaces internes permet l'accord des caractéristiques de capacité des connecteurs.
Latest bibliographic data on file with the International Bureau