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1. WO2020222343 - DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DIODE

Publication Number WO/2020/222343
Publication Date 05.11.2020
International Application No. PCT/KR2019/005385
International Filing Date 07.05.2019
IPC
H01L 33/20 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/48 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
H01L 33/10 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
CPC
H01L 2224/32227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
32227the layer connector connecting to a bond pad of the item
H01L 24/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0058
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0058relating to optical field-shaping elements
Applicants
  • 엘지전자 주식회사 LG ELECTRONICS INC. [KR]/[KR]
Inventors
  • 박상대 PARK, Sangdae
  • 박성진 PARK, Sungjin
  • 엄재광 UM, Jaegwang
  • 여환국 YUH, Hwankuk
Agents
  • 박장원 PARK, Jang-Won
Priority Data
10-2019-005096330.04.2019KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DIODE
(FR) DISPOSITIF D'AFFICHAGE UTILISANT UNE DIODE ÉLECTROLUMINESCENTE À SEMI-CONDUCTEUR
(KO) 반도체 발광소자를 이용한 디스플레이 장치
Abstract
(EN) A display device using a semiconductor light emitting diode having a size of several to several tens of μm according to an embodiment of the present invention comprises: a substrate; a semiconductor light emitting diode disposed on the substrate; a planarization layer stacked on the substrate while forming a hole which is an area in which the semiconductor light emitting diode is disposed; a light transmitting layer filled in the hole; and a reflective layer formed along the substrate forming at least the inner surface of the hole and along one surface of the planarization layer, wherein the hole may be formed to expand in width with distance from the substrate.
(FR) Un dispositif d'affichage utilisant une diode électroluminescente à semi-conducteur ayant une taille de plusieurs à plusieurs dizaines de µm selon un mode de réalisation de la présente invention comprend : un substrat ; une diode électroluminescente à semi-conducteur disposée sur le substrat ; une couche de planarisation empilée sur le substrat tout en formant un trou qui est une zone dans laquelle la diode électroluminescente à semi-conducteur est disposée ; une couche de transmission de lumière remplissant le trou ; et une couche réfléchissante formée le long du substrat formant au moins la surface interne du trou et le long d'une surface de la couche de planarisation, le trou pouvant être formé pour s'étendre en largeur à une distance du substrat.
(KO) 본 발명의 실시예에 따른 수 내지 수십 ㎛ 크기의 반도체 발광소자를 이용한 디스플레이 장치는 기판, 상기 기판에 배치되는 반도체 발광소자, 상기 반도체 발광소자가 배치되는 영역인 홀을 형성하면서 상기 기판에 적층되는 평탄화층, 상기 홀에 충진되는 광투과층 및 적어도 상기 홀의 내측면을 이루는 상기 기판과 상기 평탄화층의 일면을 따라 형성된 반사층을 포함하고, 상기 홀은 상기 기판으로부터 멀어질수록 폭이 확장되도록 형성될 수 있다.
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