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1. WO2020222149 - MICROELECTRONIC SENSOR WITH BOLOMETRIC OR PYROELECTRIC DETECTOR FOR SENSING ELECTRICAL SIGNALS IN SUB-TERAHERTZ AND TERAHERTZ FREQUENCY RANGES

Publication Number WO/2020/222149
Publication Date 05.11.2020
International Application No. PCT/IB2020/054060
International Filing Date 30.04.2020
IPC
G01J 3/42 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
3Spectrometry; Spectrophotometry; Monochromators; Measuring colours
28Investigating the spectrum
42Absorption spectrometry; Double-beam spectrometry; Flicker spectrometry; Reflection spectrometry
G01J 5/20 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
G01J 5/34 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
34using capacitors
G01L 1/16 2006.01
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
1Measuring force or stress, in general
16using properties of piezo-electric devices
G01N 27/414 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
H01L 29/84 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
84controllable by variation of applied mechanical force, e.g. of pressure
CPC
G01J 3/42
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
3Spectrometry; Spectrophotometry; Monochromators; Measuring colours
28Investigating the spectrum
42Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
G01J 5/20
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
G01J 5/34
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
34using capacitors ; , e.g. pyroelectric elements
G01L 1/16
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
1Measuring force or stress, in general
16using properties of piezo-electric devices
G01N 27/4145
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
4145specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
G01N 27/4146
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
4146involving nanosized elements, e.g. nanotubes, nanowires
Applicants
  • EPITRONIC HOLDINGS PTE. LTD. [SG]/[SG]
Inventors
  • RAM, Ayal
  • MUNIEF, Walid-Madhat
Priority Data
62/841,95502.05.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MICROELECTRONIC SENSOR WITH BOLOMETRIC OR PYROELECTRIC DETECTOR FOR SENSING ELECTRICAL SIGNALS IN SUB-TERAHERTZ AND TERAHERTZ FREQUENCY RANGES
(FR) CAPTEUR MICROÉLECTRONIQUE À DÉTECTEUR BOLOMÉTRIQUE OU PYROÉLECTRIQUE PERMETTANT LA DÉTECTION DE SIGNAUX ÉLECTRIQUES DANS DES GAMMES DE FRÉQUENCES INFRA-TÉRAHERTZ ET TÉRAHERTZ
Abstract
(EN)
The present invention relates to an open-gate pseudo-conducting high-electron mobility transistor (PC-HEMT) combined with a bolometric or pyroelectric detector installed in an open gate area of the transistor, for amplifying signals in the frequency range between 30 GHz to 430 THz. The transistor of the present invention further comprises either an asymmetric dual grating gate created on top of a detector layer, or a separately-biased grating gate created on top and in the middle of the detector layer. The grating gate is capable of completely depleting the 2DEG or 2DHG conducting channel locally, while leaving the remaining area under the grating gate to be tuned for resonant plasmon absorption of sub-THz or THz radiation. A microelectronic sensor comprising the PC-HEMT of the present invention is suitable for chemical sensing and biomolecular diagnostics. Non-limiting examples of biological compounds to be tested are human viral pathogens, such as SARS-CoV-2.
(FR)
La présente invention concerne un transistor à haute mobilité électronique pseudo conducteur à grille ouverte (PC-HEMT)) combiné à un détecteur bolométrique ou pyroélectrique installé dans une zone de grille ouverte du transistor, permettant d'amplifier des signaux dans la plage de fréquence comprise entre 30 GHz et 430 THz. Le transistor de la présente invention comprend en outre soit une grille à double réseau asymétrique créée au sommet d'une couche de détecteur, soit une grille de réseau polarisée séparément créée au sommet et au milieu de la couche de détecteur. La grille de réseau est capable d'appauvrir complètement le canal conducteur 2DEG ou 2DHG localement, tout en laissant la zone restante sous la grille de réseau à accorder pour une absorption de plasmon de résonance de rayonnement infra-THz ou THz. Un capteur microélectronique comprenant le PC-HEMT de la présente invention est approprié pour la détection chimique et le diagnostic de biomolécules. Des exemples non limitatifs de composés biologiques à tester sont des virus pathogènes humains, tels que le SARS-CoV-2.
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