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1. WO2020221517 - SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT

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Publication Number WO/2020/221517
Publication Date 05.11.2020
International Application No. PCT/EP2020/058305
International Filing Date 25.03.2020
IPC
H01L 29/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/165 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
161including two or more of the elements provided for in group H01L29/1688
165in different semiconductor regions
H01L 29/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/165
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
161including two or more of the elements provided for in group H01L29/16 ; , e.g. alloys
165in different semiconductor regions ; , e.g. heterojunctions
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
H01L 29/66734
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
66712Vertical DMOS transistors, i.e. VDMOS transistors
66734with a step of recessing the gate electrode, e.g. to form a trench gate electrode
H01L 29/7803
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7803structurally associated with at least one other device
H01L 29/7806
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7803structurally associated with at least one other device
7806the other device being a Schottky barrier diode
Applicants
  • ROBERT BOSCH GMBH [DE]/[DE]
Inventors
  • MARTINEZ-LIMIA, Alberto
  • BARTOLF, Holger
  • GOERLACH, Alfred
  • FEILER, Wolfgang
  • SCHWAIGER, Stephan
Priority Data
10 2019 206 148.630.04.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
(EN) SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION D’UN COMPOSANT SEMI-CONDUCTEUR
front page image
Abstract
(DE)
Halbleiterbauelement (200, 300, 400) mit einem Halbleitersubstrat (201, 301, 401), das eine erste Seite aufweist auf der eine Epitaxieschicht (202, 302, 402) angeordnet ist, wobei auf der Epitaxieschicht (202, 302, 402) bereichsweise Bodygebiete (203, 303, 403) angeordnet sind und auf den Bodygebieten (203, 303, 403) Sourcegebiete (204, 304, 404) angeordnet sind, wobei sich eine Vielzahl erster Gräben (205, 305, 405) und eine Vielzahl zweiter Gräben (206, 306, 406) ausgehend von den Sourcegebieten (204, 304, 404) bis in die Epitaxieschicht (202, 302, 402) erstrecken, wobei die ersten Gräben (205, 305, 405) eine größere Tiefe aufweisen als die zweiten Gräben (206, 306, 406), wobei sich jeweils ein zweiter Graben (206, 306, 406) bereichsweise in einen ersten Graben (205, 305, 405) erstreckt, dadurch gekennzeichnet, dassauf einer Grabenoberfläche der ersten Gräben (205, 305, 405) jeweils eine Schicht mit einer ersten Dotierung angeordnet ist, wobei die ersten Gräben (205, 305, 405) mit einem ersten Material (207, 307, 407) verfüllt sind, das eine zweite Dotierungskonzentration aufweist, wobei die erste Dotierungskonzentration einen höheren Wert aufweist als die zweite Dotierungskonzentration.
(EN)
The invention relates to a semiconductor component (200, 300, 400) comprising a semiconductor substrate (201, 301, 401) which has a first face on which an epitaxial layer (202, 302, 402) is arranged, wherein body regions (203, 303, 403) are arranged in some regions of the epitaxial layer (202, 302, 402), and source regions (204, 304, 404) are arranged in the body regions (203, 303, 403), wherein a plurality of first trenches (205, 305, 405) and a plurality of second trenches (206, 306, 406) extend from the source regions (204, 304, 404) into the epitaxial layer (202, 302, 402), the first trenches (205, 305, 405) having a greater depth than the second trenches (206, 306, 406), wherein a second trench (206, 306, 406) each extends into some regions of a first trench (205, 305, 405), characterized in that a layer having a first doping is arranged on each trench surface of the first trenches (205, 305, 405), wherein the first trenches (205, 305, 405) are filled with a first material (207, 307, 407) which has a second doping concentration, the first doping concentration having a higher value than the second doping concentration.
(FR)
La présente invention concerne un composant semi-conducteur (200, 300, 400) ayant un substrat semi-conducteur (201, 301, 401) qui comprend une première face sur laquelle est disposée une couche épitaxiale (202, 302, 402). Sur la couche épitaxiale (202, 302, 402) sont disposées par secteur des zones de corps (203, 303, 403) et sur les zones de corps (203, 303, 403) sont disposées des zones de source (204, 304, 404). Une pluralité de premiers fossés (205, 305, 405) et une pluralité de seconds fossés (206, 306, 406) s’étendent depuis les zones de source (204, 304, 404) jusque dans la couche épitaxiale (202, 302, 402), les premiers fossés (205, 305, 405) présentant une plus grande profondeur que les seconds fossés (206, 306, 406), et chaque second fossé (206, 306, 406) s’étendant par secteur dans un premier fossé (205, 305, 405). La présente invention est caractérisée en ce qu’une couche ayant un premier dopage est disposée sur chaque surface de fossé des premiers fossés (205, 305, 405), les premiers fossés (205, 305, 405) étant remplis avec un premier matériau (207, 307, 407) qui présente une seconde concentration de dopage, et la première concentration de dopage présentant une valeur plus élevée que la seconde concentration de dopage.
Also published as
DE102019206148
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