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1. WO2020220864 - QLED DEVICE AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY APPARATUS

Publication Number WO/2020/220864
Publication Date 05.11.2020
International Application No. PCT/CN2020/080908
International Filing Date 24.03.2020
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
CPC
H01L 27/3211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3206Multi-colour light emission
3211using RGB sub-pixels
H01L 27/3244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/5096
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5096Carrier blocking layer
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 赵德江 ZHAO, Dejiang
Agents
  • 北京中博世达专利商标代理有限公司 BEIJING ZBSD PATENT&TRADEMARK AGENT LTD.
Priority Data
201910357706.629.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QLED DEVICE AND METHOD FOR MANUFACTURING SAME, DISPLAY PANEL, AND DISPLAY APPARATUS
(FR) DISPOSITIF À QLED ET SON PROCÉDÉ DE FABRICATION, PANNEAU D'AFFICHAGE ET APPAREIL D'AFFICHAGE
(ZH) QLED器件及其制备方法、显示面板、显示装置
Abstract
(EN)
Disclosed is a QLED device, comprising: a quantum dot light-emitting layer, an anode, a cathode, and a barrier layer. The anode and the cathode are respectively provided at two sides of the quantum dot light-emitting layer. The barrier layer is provided between at least one of the anode and cathode and the quantum dot light-emitting layer, wherein the barrier layer comprises a plurality of nano particles arranged in a dispersed manner, and there are gaps among the plurality of nano particles, such that the anode or the cathode is in contact with the quantum dot light-emitting layer via the gaps.
(FR)
L'invention concerne un dispositif à QLED, comprenant : une couche électroluminescente à points quantiques, une anode, une cathode et une couche barrière. L'anode et la cathode sont respectivement disposées sur deux côtés de la couche électroluminescente à points quantiques. La couche barrière est disposée entre au moins l'une de l'anode et de la cathode et de la couche électroluminescente à points quantiques, la couche barrière comprenant une pluralité de nanoparticules agencées de manière dispersée, et il y a des espaces entre la pluralité de nanoparticules, de telle sorte que l'anode ou la cathode est en contact avec la couche électroluminescente à points quantiques par l'intermédiaire des espaces.
(ZH)
一种QLED器件,包括:量子点发光层、阳极、阴极以及阻挡层。所述阳极和所述阴极分别设置于所述量子点发光层两侧。所述阻挡层设置于所述阳极和所述阴极中的至少一者与所述量子点发光层之间。其中,所述阻挡层包括分散排列的多个纳米颗粒,所述多个纳米颗粒之间具有间隙,以使所述阳极或所述阴极通过所述间隙与所述量子点发光层接触。
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