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1. WO2020220556 - THREE-DIMENSIONAL MEMORY DEVICE WITH THREE-DIMENSIONAL PHASE-CHANGE MEMORY

Publication Number WO/2020/220556
Publication Date 05.11.2020
International Application No. PCT/CN2019/105312
International Filing Date 11.09.2019
IPC
H01L 27/105 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
CPC
G11C 11/005
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
005comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
G11C 11/401
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G11C 11/5621
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5621using charge storage in a floating gate
G11C 11/5678
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5678using amorphous/crystalline phase transition storage elements
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
G11C 14/0018
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
14Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
0009in which the volatile element is a DRAM cell
0018whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
Applicants
  • YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • LIU, Jun
Agents
  • NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.
Priority Data
PCT/CN2019/08523730.04.2019CN
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) THREE-DIMENSIONAL MEMORY DEVICE WITH THREE-DIMENSIONAL PHASE-CHANGE MEMORY
(FR) DISPOSITIF DE MÉMOIRE TRIDIMENSIONNELLE À MÉMOIRE TRIDIMENSIONNELLE DE CHANGEMENT DE PHASE
Abstract
(EN) A three-dimensional memory device (300) with 3D phase-change memory includes a first semiconductor structure (302) including a peripheral circuit, an array of 3D PCM cells (318), and a first bonding layer (324) including a plurality of first bonding contacts (326); a second semiconductor structure (304) including an array of 3D NAND memory strings (338) and a second bonding layer (328) including a plurality of second bonding contacts (330); a bonding interface (306) between the first bonding layer (324) and the second bonding layer (328), wherein the first bonding contacts (326) are in contact with the second bonding contacts (330) at the bonding interface (306).
(FR) L'invention concerne un dispositif de mémoire tridimensionnelle (300) doté d'une mémoire de changement de phase 3D (PCM 3D) comprenant une première structure semi-conductrice (302) comprenant un circuit périphérique, un réseau de cellules de PCM 3D (318) et une première couche de liaison (324) comprenant une pluralité de premiers contacts de liaison (326) ; une seconde structure semi-conductrice (304) comprenant un réseau de chaînes de mémoire 3D NON-ET (338) et une seconde couche de liaison (328) comprenant une pluralité de seconds contacts de liaison (330) ; une interface de liaison (306) entre la première couche de liaison (324) et la seconde couche de liaison (328), les premiers contacts de liaison (326) étant en contact avec les seconds contacts de liaison (330) au niveau de l'interface de liaison (306).
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