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1. WO2020220529 - TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/220529
Publication Date 05.11.2020
International Application No. PCT/CN2019/102181
International Filing Date 23.08.2019
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
G02F 1/1368 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
CPC
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
Applicants
  • 深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 田新斌 TIAN, Xinbin
  • 徐向阳 XU, Xiangyang
Agents
  • 深圳市德力知识产权代理事务所 COMIPS INTELLECTUAL PROPERTY OFFICE
Priority Data
201910365438.230.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR
(FR) SUBSTRAT DE RÉSEAU À TFT ET SON PROCÉDÉ DE FABRICATION
(ZH) TFT 阵列基板及其制作方法
Abstract
(EN)
A TFT array substrate and a manufacturing method therefor. The TFT array substrate comprises a substrate (10), a first metal layer (20) disposed on the substrate (10), a gate insulating layer (30) disposed on the substrate (10) and the first metal layer (20), an active layer (40) disposed on the gate insulating layer (30), and a second metal layer (50) disposed on the gate insulating layer (30); the first metal layer (20) comprises a gate (21); the active layer (40) is located above the gate (21); the second metal layer (50) comprises a source (51) and a drain (52) which are spaced from each other; the source (51) and the drain (52) are respectively in contact with two ends of the active layer (40); the gate insulating layer (30) comprises a first portion (31) covering the gate (21) and a second portion (32) connected to the first portion (31); the thickness of the first portion (31) is smaller than the thickness of the second portion (32). The on-state current of a TFT device can be effectively increased and the threshold voltage can be reduced to improve the switching characteristics, and thus the product quality is improved.
(FR)
L'invention concerne un substrat de réseau à transistors à couches minces (TFT) et son procédé de fabrication. Le substrat de réseau TFT comprend un substrat (10), une première couche métallique (20) disposée sur le substrat (10), une couche d'isolation de grille (30) disposée sur le substrat (10) et la première couche métallique (20), une couche active (40) disposée sur la couche d'isolation de grille (30), et une seconde couche métallique (50) disposée sur la couche d'isolation de grille (30). La première couche métallique (20) comprend une grille (21) ; la couche active (40) est située au-dessus de la grille (21) ; la seconde couche métallique (50) comprend une source (51) et un drain (52) qui sont espacés l'un de l'autre ; la source (51) et le drain (52) sont respectivement en contact avec deux extrémités de la couche active (40) ; la couche d'isolation de grille (30) comprend une première partie (31) recouvrant la grille (21) et une seconde partie (32) reliée à la première partie (31) ; l'épaisseur de la première partie (31) est inférieure à l'épaisseur de la seconde partie (32). Le courant à l'état passant d'un dispositif TFT peut être efficacement augmenté et la tension de seuil peut être réduite pour améliorer les caractéristiques de commutation, et ainsi la qualité du produit est améliorée.
(ZH)
一种TFT阵列基板及其制作方法。TFT阵列基板包括衬底(10)、设于衬底(10)上的第一金属层(20)、设于衬底(10)及第一金属层(20)上的栅极绝缘层(30)、设于栅极绝缘层(30)上的有源层(40)及设于栅极绝缘层(30)上的第二金属层(50),第一金属层(20)包括栅极(21),有源层(40)位于栅极(21)上方,第二金属层(50)包括间隔的源极(51)及漏极(52),源极(51)及漏极(52)分别与有源层(40)的两端接触,栅极绝缘层(30)包括覆盖栅极(21)的第一部分(31)及连接第一部分(31)的第二部分(32),第一部分(31)的厚度小于第二部分(32)的厚度,能够有效提升TFT器件的开态电流并降低阈值电压以提升其开关特性,从而提升产品的品质。
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