Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020220394 - DOUBLE-SIDED POWER GENERATION SOLAR CELL AND FABRICATING METHOD THEREFOR

Publication Number WO/2020/220394
Publication Date 05.11.2020
International Application No. PCT/CN2019/086564
International Filing Date 13.05.2019
IPC
H01L 31/0216 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
CPC
H01L 31/02168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
02168the coatings being antireflective or having enhancing optical properties for the solar cells
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/0684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0684double emitter cells, e.g. bifacial solar cells
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • 南通天盛新能源股份有限公司 NANTONG T-SUN NEW ENERGY CO., LTD. [CN]/[CN]
Inventors
  • 朱鹏 ZHU, Peng
  • 刘媛 LIU, Yuan
  • 吴广 WU, Guang
  • 郑金华 ZHENG, Jinhua
Priority Data
201910353961.329.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DOUBLE-SIDED POWER GENERATION SOLAR CELL AND FABRICATING METHOD THEREFOR
(FR) CELLULE SOLAIRE DE PRODUCTION D'ÉLECTRICITÉ DOUBLE FACE ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种双面发电太阳能电池及其制备方法
Abstract
(EN)
Disclosed is a double-sided power generation solar cell, comprising: a silicon substrate; N emitter electrodes, a front anti-reflection passivation film, and front electrodes that are provided on the front surface of the silicon substrate from bottom to top; and a back passivation film, back electric fields, and back electrodes that are provided on the back surface of the silicon substrate from top to bottom. The solar cell is a double-sided solar cell. The back electric fields are local aluminum back electric fields. The local aluminum back electric fields are linearly slotted by etching the back passivation film using an inorganic etching paste, and then the slot is covered with aluminum paste having a high conductivity. The solar cell has a BSF layer of 2-5 μm. The back electric field structure of the solar cell of the present invention can increase the thickness of the BSF layer, so that the damage to the silicon substrate is reduced, and the consumption of aluminum paste is reduced, thereby increasing the photoelectric conversion rate.
(FR)
L'invention concerne une cellule solaire de production d'électricité double face, comprenant : un substrat en silicium ; N électrodes d'émetteur, un film de passivation anti-reflet avant, et des électrodes avant disposées de haut en bas sur la surface avant du substrat en silicium ; et un film de passivation arrière, des champs électriques arrière et des électrodes arrière disposées de haut en bas sur la surface arrière du substrat en silicium. La cellule solaire est une cellule solaire double face. Les champs électriques arrière sont des champs électriques arrière locaux en aluminium. Les champs électriques arrière locaux en aluminium sont fendus linéairement par gravure du film de passivation arrière à l'aide d'une pâte de gravure inorganique, puis la fente est recouverte d'une pâte d'aluminium ayant une haute conductivité. La cellule solaire comporte une couche de BSF faisant 2 à 5 µm. La structure de champs électriques arrière de la cellule solaire de la présente invention permet d'augmenter l'épaisseur de la couche de BSF, ce qui permet de réduire l'endommagement du substrat en silicium, et de réduire la consommation de pâte d'aluminium, augmentant ainsi le taux de conversion photoélectrique.
(ZH)
本发明公开了一种双面发电太阳能电池,包括硅基体,从下而上依次设于硅基体正面的N发射电极、正面减反射钝化膜和正面电极,以及从上而下设于硅基体背面的背面钝化膜、背电场和背电极,太阳能电池为双面太阳能电池,背电场为局部铝背电场,局部铝背电场通过在背面钝化膜上用无机刻蚀浆料刻蚀后呈线性开槽,然后在开槽处覆盖高导电铝浆,太阳能电池有2~5μm的BSF层。本发明的太阳能电池背电场结构,能够使得BSF层厚度增加,硅基体破坏减少,铝浆耗量减少,从而提高光电转化率。
Latest bibliographic data on file with the International Bureau