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1. WO2020209044 - TAPE FOR ELECTRONIC COMPONENT AND METHOD OF PROCESSING ELECTRONIC COMPONENT

Publication Number WO/2020/209044
Publication Date 15.10.2020
International Application No. PCT/JP2020/012848
International Filing Date 24.03.2020
IPC
C09J 201/00 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
201Adhesives based on unspecified macromolecular compounds
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
C09J 7/24 2018.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
7Adhesives in the form of films or foils
20characterised by their carriers
22Plastics; Metallised plastics
24based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
C09J 7/25 2018.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
7Adhesives in the form of films or foils
20characterised by their carriers
22Plastics; Metallised plastics
25based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
Applicants
  • 古河電気工業株式会社 FURUKAWA ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 大倉 雅人 OKURA, Masato
Agents
  • 松下 亮 MATSUSHITA, Makoto
  • 橋本 多香子 HASHIMOTO, Takako
Priority Data
2019-07351108.04.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) TAPE FOR ELECTRONIC COMPONENT AND METHOD OF PROCESSING ELECTRONIC COMPONENT
(FR) BANDE POUR COMPOSANT ÉLECTRONIQUE ET PROCÉDÉ DE TRAITEMENT DE COMPOSANT ÉLECTRONIQUE
(JA) 電子部品用テープおよび電子部品の加工方法
Abstract
(EN)
Provided are a tape for an electronic component and a method of processing an electronic component, which can sufficiently follow a semiconductor wafer having a bump with a large height and can prevent a dimple from occurring on the ground surface of the semiconductor wafer. The tape 1 for an electronic component according to the present invention is characterized in that the tape 1 has at least one resin layer 3, the resin layer 3 has a storage modulus of 10000 to 200000 Pa at any temperature of 60℃ to 80℃, and the melt flow rate is 10 g/10 min to 200 g/10 min.
(FR)
L'invention concerne une bande pour un composant électronique et un procédé de traitement d'un composant électronique, qui peut suivre suffisamment une tranche de semi-conducteur ayant une bosse de grande hauteur et peut empêcher une alvéole de se produire sur la surface de sol de la tranche de semi-conducteur. La bande 1 pour un composant électronique selon la présente invention est caractérisée en ce que la bande 1 comporte au moins une couche de résine 3, la couche de résine 3 a un module de stockage de 10 000 à 200 000 Pa à n'importe quelle température de 60 °C à 80 °C, et le débit de fusion est de 10 g/10 min à 200 g/10 min.
(JA)
高さが大きなバンプを有する半導体ウエハに対しても十分に追従させることができるとともに、半導体ウエハ研削面にディンプルが発生するのを防止することができる電子部品用テープおよび電子部品の加工方法を提供する。本願発明による電子部品用テープ1は、少なくとも1層の樹脂層3を有し、樹脂層3は、貯蔵弾性率が60℃~80℃のいずれかの温度において10000~200000Paであり、メルトフローレートが10~200g/10minであることを特徴とする。
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