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1. WO2020209010 - METHOD FOR MANUFACTURING ELECTRONIC DEVICE

Publication Number WO/2020/209010
Publication Date 15.10.2020
International Application No. PCT/JP2020/011380
International Filing Date 16.03.2020
IPC
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0735 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0735comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/142 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
142Energy conversion devices
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 石崎 順也 ISHIZAKI Jun-ya
  • 古屋 翔吾 FURUYA Shogo
  • 秋山 智弘 AKIYAMA Tomohiro
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
Priority Data
2019-07437509.04.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING ELECTRONIC DEVICE
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE
(JA) 電子デバイスの製造方法
Abstract
(EN)
The present invention provides a method for manufacturing an electronic device having a drive circuit equipped with a solar cell structure, the method comprising: a step for forming a bonded wafer by bonding a first wafer, which is formed on a starting substrate by epitaxial growth and has a plurality of independent solar cell structures formed of a compound semiconductor, and a second wafer, which has a plurality of independent drive circuits formed thereon, to each other in such a way that the plurality of solar cell structures and the plurality of drive circuits respectively overlap each other; a step for performing wiring in the bonded wafer so as to enable power supply from the plurality of solar cell structures to each of the plurality of drive circuits; and a step for manufacturing an electronic device having a drive circuit equipped with the solar cell structures, by dicing the bonded wafer. Thus, provided is a method for manufacturing an electronic device having a drive circuit and a solar cell structure in one chip, the method reducing manufacturing cost.
(FR)
La présente invention concerne un procédé de fabrication d'un dispositif électronique ayant un circuit d'attaque équipé d'une structure de cellule solaire, le procédé comprenant : une étape de formation d'une tranche liée par liaison conjointement d'une première tranche, qui est formée sur un substrat de départ par croissance épitaxiale et comporte une pluralité de structures de cellule solaire indépendantes formées d'un semi-conducteur composite, et d'une seconde tranche, sur laquelle une pluralité de circuits d'attaque indépendants sont formés, de telle sorte que la pluralité de structures de cellule solaire et la pluralité de circuits d'attaque se chevauchent respectivement ; une étape de réalisation d'un câblage dans la tranche liée de façon à permettre une alimentation électrique de la pluralité de structures de cellule solaire à chacun de la pluralité de circuits d'attaque ; et une étape de fabrication d'un dispositif électronique ayant un circuit d'attaque équipé des structures de cellule solaire, par découpage en dés de la tranche liée. Ainsi, l'invention concerne un procédé de fabrication d'un dispositif électronique ayant un circuit d'attaque et une structure de cellule solaire dans une puce, le procédé réduisant le coût de fabrication.
(JA)
本発明は、太陽電池構造を備えた駆動回路を有する電子デバイスを製造する方法であって、出発基板上にエピタキシャル成長によって形成された、化合物半導体からなる複数の独立した太陽電池構造を有する第一のウェーハと、複数の独立した駆動回路が形成された第二のウェーハを、前記複数の太陽電池構造と前記複数の駆動回路が夫々重なり合うように接合して接合ウェーハとする工程と、前記接合ウェーハにおいて前記複数の太陽電池構造から前記複数の駆動回路に夫々電力が供給可能なように配線を行う工程と、前記接合ウェーハをダイシングすることで、前記太陽電池構造を備えた駆動回路を有する電子デバイスを製造する工程とを有することを特徴とする電子デバイスの製造方法である。これにより、駆動回路と太陽電池構造を1チップに備え、かつ製造コストを抑制した電子デバイスの製造方法が提供される。
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