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1. WO2020207917 - OPTOELECTRONIC DEVICE, PHOTONIC DETECTOR AND METHOD OF PRODUCING AN OPTOELECTRONIC DEVICE

Publication Number WO/2020/207917
Publication Date 15.10.2020
International Application No. PCT/EP2020/059557
International Filing Date 03.04.2020
IPC
H01L 31/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
105the potential barrier being of the PIN type
CPC
H01L 27/14618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14618Containers
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 31/02019
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
02016Circuit arrangements of general character for the devices
02019for devices characterised by at least one potential jump barrier or surface barrier
H01L 31/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
105the potential barrier being of the PIN type
Applicants
  • AMS INTERNATIONAL AG [CH]/[CH]
Inventors
  • DENIER, Urs
  • FITZI, Andreas
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
19168472.910.04.2019EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OPTOELECTRONIC DEVICE, PHOTONIC DETECTOR AND METHOD OF PRODUCING AN OPTOELECTRONIC DEVICE
(FR) DISPOSITIF OPTOÉLECTRONIQUE, DÉTECTEUR PHOTONIQUE ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF OPTOÉLECTRONIQUE
Abstract
(EN)
An optoelectronic device comprises a first semiconductor layer (1) of a first conductivity having a front side (11) and a backside (12). A second semiconductor layer (2) of a second conductivity is arranged on the front side (11) of the first semiconductor layer (1), and further comprises a first semiconductor region (21) and a second semiconductor region (22) forming a photodiode (23) in the second semiconductor layer (2). A signal path (5) electrically connects the photodiode (23) to a fixed potential.
(FR)
L'invention concerne un dispositif optoélectronique comprenant une première couche semi-conductrice (1) d'une première conductivité ayant un côté avant (11) et un côté arrière (12). Une seconde couche semi-conductrice (2) d'une seconde conductivité est disposée sur le côté avant (11) de la première couche semi-conductrice (1), et comprend en outre une première région semi-conductrice (21) et une seconde région semi-conductrice (22) formant une photodiode (23) dans la seconde couche semi-conductrice (2). Un trajet de signal (5) connecte électriquement la photodiode (23) à un potentiel fixe.
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