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1. WO2020207234 - SINGLE CRYSTAL SUBSTRATE USING 2D-MATERIAL EPITAXY TO ELIMINATE DEFECTS, AND FABRICATING METHOD THEREFOR AND COMPONENTS THEREOF

Publication Number WO/2020/207234
Publication Date 15.10.2020
International Application No. PCT/CN2020/080585
International Filing Date 23.03.2020
IPC
H01L 33/44 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01S 5/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
CPC
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01S 5/0206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0206Substrates, e.g. growth, shape, material, removal or bonding;
Applicants
  • 王晓靁 WANG, Hsiao-Lei [CN]/[CN]
Inventors
  • 王晓靁 WANG, Hsiao-Lei
  • 刘家桓 LIU, Chia-Huan
  • 宋高梅 SUNG, Kao-Mei
Agents
  • 厦门市精诚新创知识产权代理有限公司 XIAMEN JINGCHENGXINCHUANG INTELLECTUAL PRO
Priority Data
201910282654.010.04.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SINGLE CRYSTAL SUBSTRATE USING 2D-MATERIAL EPITAXY TO ELIMINATE DEFECTS, AND FABRICATING METHOD THEREFOR AND COMPONENTS THEREOF
(FR) SUBSTRAT MONOCRISTALLIN UTILISANT UNE ÉPITAXIE DE MATÉRIAU BIDIMENSIONNEL (2D) POUR ÉLIMINER DES DÉFAUTS, ET SON PROCÉDÉ DE FABRICATION ET COMPOSANTS ASSOCIÉS
(ZH) 采用2D材料磊晶去疵单晶基板及其制备方法和制作组件
Abstract
(EN)
Disclosed is a single crystal substrate using 2D-material epitaxy to eliminate defects. On a low-cost GaN single crystal substrate or a single crystal substrate made of another low-cost GaN quasi-homogeneous material, a van der Waals 2D-material having a barrier effect is used to epitaxially grow a ultra-thin 2D-material layer as an intermediary layer. A high-quality GaN or GaN-based epitaxial layer is epitaxially grown in a Van der Waals manner on the ultra-thin 2D-material layer. The ultra-thin 2D-material layer is composed of a single material or a stack of more than one material. The conditions for epitaxy of the single crystal substrate made of a quasi-homogeneous material is: the lattice constant mismatch is not greater than 5%, and the thermal expansion coefficient difference is not greater than 1.5×10-6°C-1. Also disclosed are a fabricating method and components thereof. By means of the present invention, a high-quality GaN single crystal substrate can be obtained, the epitaxy and assembly processes are simplified, so that the selection range of substrate materials is wider, and the fabricating costs are greatly reduced, thereby facilitating market promotion and application.
(FR)
L'invention concerne un substrat monocristallin utilisant une épitaxie de matériau bidimensionnel (2D) pour éliminer des défauts. Sur un substrat monocristallin en GaN à faible coût ou un substrat monocristallin constitué d'un autre matériau quasi-homogène en GaN à faible coût, un matériau 2D de Van der Waals ayant un effet barrière est utilisé pour mettre en croissance de manière épitaxiale une couche de matériau 2D ultra-mince en tant que couche intermédiaire. Une couche épitaxiale à base de GaN ou de GaN de haute qualité est mise en croissance de manière épitaxiale d'une manière de Van der Waals sur la couche de matériau 2D ultra-mince. La couche de matériau 2D ultra-mince est composée d'un unique matériau ou d'un empilement de plus qu'un matériau. Les conditions pour l'épitaxie du substrat monocristallin constitué d'un matériau quasi-homogène sont : la désadaptation de constante de réseau n'est pas supérieure à 5 %, et la différence de coefficient de dilatation thermique n'est pas supérieure à 1,5×10-6°C-1. L'invention concerne également un procédé de fabrication et des composants associés. Au moyen de la présente invention, un substrat monocristallin en GaN de haute qualité peut être obtenu, les processus d'épitaxie et d'assemblage sont simplifiés, de telle sorte que la plage de sélection de matériaux de substrat est plus large, et les coûts de fabrication sont considérablement réduits, ce qui facilite la promotion et l'application sur le marché.
(ZH)
本发明公开了采用2D材料磊晶去疵单晶基板,在低成本GaN单晶基板或其他低成本的GaN准同质材料单晶基板上采用阻隔效果的2D材料范德华外延生长2D材料超薄层作为中介层,在2D材料超薄层上范德华外延生长高质量GaN或GaN基外延层,2D材料超薄层由单一材料构成或者一种以上材料迭层形成,准同质材料单晶基板外延的条件范围为:晶格常数不匹配度不大于5%以及热膨胀系数差异不大于1.5×10-6-1。本发明还公开了制备方法以及其制作组件。本发明可获得高质量GaN单晶基板,将外延及组件工序简化,使得采用的基板材料选择可能性更为宽广,制造成本大大降低,有利于市场推广应用。
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