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1. WO2020205020 - BONDED ASSEMBLY CONTAINING SIDE BONDING STRUCTURES AND METHODS OF MANUFACTURING THE SAME

Publication Number WO/2020/205020
Publication Date 08.10.2020
International Application No. PCT/US2019/068642
International Filing Date 27.12.2019
IPC
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
G06F 3/06 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
06Digital input from, or digital output to, record carriers
H01L 27/11551 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11551characterised by three-dimensional arrangements, e.g. with cells on different height levels
H01L 23/482 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
H01L 23/498 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
498Leads on insulating substrates
CPC
H01L 23/5226
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
5226Via connections in a multilevel interconnection structure
H01L 23/5283
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Geometry or; layout of the interconnection structure
5283Cross-sectional geometry
H01L 24/09
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas
07Structure, shape, material or disposition of the bonding areas after the connecting process
09of a plurality of bonding areas
H01L 24/49
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
Applicants
  • SANDISK TECHNOLOGIES LLC [US]/[US]
Inventors
  • SANO, Michiaki
  • YAMAHA, Takashi
  • ITO, Koichi
  • YOKOMIZO, Ikue
  • HIRAMATSU, Ryo
  • WATANABE, Kazuto
  • KATO, Katsuya
  • YAMAMOTO, Hajime
  • SASAKI, Hiroshi
Agents
  • RADOMSKY, Leon
  • COHN, Joanna
  • CONNOR, David
  • COUGHLIN, Timothy
  • GAYOSO, Tony
  • GILL, Matthew
  • GUNNELS, Zarema
  • HANSEN, Robert
  • HUANG, Stephen
  • HYAMS, David
  • JOHNSON, Timothy
  • MAZAHERY, Benjamin
  • MURPHY, Timothy
  • NORRIS, Christine
  • O'BRIEN, Michelle
  • PARK, Byeongju
  • RUTT, J. Steven
  • SULSKY, Martin
Priority Data
16/372,90802.04.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) BONDED ASSEMBLY CONTAINING SIDE BONDING STRUCTURES AND METHODS OF MANUFACTURING THE SAME
(FR) ENSEMBLE LIÉ CONTENANT DES STRUCTURES DE LIAISON LATÉRALE ET SES PROCÉDÉS DE FABRICATION
Abstract
(EN)
A bonded assembly includes a first stack containing a first semiconductor die bonded to a second semiconductor die along a stacking direction, first external bonding pads formed within the first semiconductor die, and bonding connection wires. Each of the bonding connection wires extends over a sidewall of the first semiconductor die and protrudes into the first semiconductor die through the sidewall of the first semiconductor die to contact a respective one of the first external bonding pads.
(FR)
Un ensemble lié comprend un premier empilement contenant une première puce semi-conductrice liée à une seconde puce semi-conductrice le long d'une direction d'empilement, des premiers plots de connexion externes formés à l'intérieur de la première puce semi-conductrice, et des fils de connexion de liaison. Chacun des fils de connexion de liaison s'étend sur une paroi latérale de la première puce semi-conductrice et fait saillie dans la première puce semi-conductrice à travers la paroi latérale de la première puce semi-conductrice pour entrer en contact avec un des premiers plots de connexion externes respectif.
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