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1. WO2020204834 - HETEROGENOUS INTEGRATION OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR AND MEMS SENSORS

Publication Number WO/2020/204834
Publication Date 08.10.2020
International Application No. PCT/SG2020/050202
International Filing Date 01.04.2020
IPC
B81C 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
CPC
B81B 2201/0207
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
02Sensors
0207Bolometers
B81B 2207/012
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2207Microstructural systems or auxiliary parts thereof
01comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
012the micromechanical device and the control or processing electronics being separate parts in the same package
B81B 2207/015
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2207Microstructural systems or auxiliary parts thereof
01comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
015the micromechanical device and the control or processing electronics being integrated on the same substrate
B81C 1/00238
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00222Integrating an electronic processing unit with a micromechanical structure
00238Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
B81C 2201/0194
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0174for making multi-layered devices, film deposition or growing
0191Transfer of a layer from a carrier wafer to a device wafer
0194the layer being structured
B81C 2203/036
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2203Forming microstructural systems
03Bonding two components
033Thermal bonding
036Fusion bonding
Applicants
  • MERIDIAN INNOVATION PTE LTD [SG]/[SG]
Inventors
  • ANG, Wan Chia
  • KROPELNICKI, Piotr
  • OCAK, Ilker Ender
Agents
  • HORIZON IP PTE LTD
Priority Data
62/827,20701.04.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HETEROGENOUS INTEGRATION OF COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR AND MEMS SENSORS
(FR) INTÉGRATION HÉTÉROGÈNE DE SEMI-CONDUCTEUR À OXYDE MÉTALLIQUE COMPLÉMENTAIRE ET DE CAPTEURS DE MEMS
Abstract
(EN)
A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
(FR)
L'invention concerne un dispositif semi-conducteur à oxyde métallique complémentaire (CMOS) intégré à des composants de système microélectromécanique (MEMS) dans une région MEMS. Les composants MEMS sont, par exemple, des thermocapteurs infrarouges (IR). Les capteurs MEMS sont intégrés de manière hétérogène sur le dispositif CMOS. Par exemple, une tranche CMOS avec des dispositifs CMOS et des interconnexions ainsi que des modules MEMS partiellement traités est liée à une tranche MEMS avec des structures MEMS, des problèmes de compatibilité CMOS postérieure étant par là-même atténués. Un procédé d'intégration postérieure pour compléter les dispositifs comprend la formation de contacts pour interconnecter les capteurs aux composants CMOS, ainsi que l'encapsulation des dispositifs avec une tranche capuchon à l'aide d'un conditionnement sous vide au niveau de la tranche.
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