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1. WO2020203787 - SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPLEX, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE

Publication Number WO/2020/203787
Publication Date 08.10.2020
International Application No. PCT/JP2020/014060
International Filing Date 27.03.2020
IPC
H01L 23/13 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
13characterised by the shape
H01L 23/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
C04B 37/02 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
37Joining burned ceramic articles with other burned ceramic articles or other articles by heating
02with metallic articles
C04B 35/587 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515based on non-oxides
58based on borides, nitrides or silicides
584based on silicon nitride
587Fine ceramics
G01N 23/223 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/-G01N17/178
22by measuring secondary emission from the material
223by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
Applicants
  • デンカ株式会社 DENKA COMPANY LIMITED [JP]/[JP]
Inventors
  • 津川 優太 TSUGAWA Yuta
  • 小橋 聖治 KOBASHI Seiji
  • 西村 浩二 NISHIMURA Koji
Agents
  • 速水 進治 HAYAMI Shinji
Priority Data
2019-06554129.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPLEX, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE
(FR) SUBSTRAT DE NITRURE DE SILICIUM, COMPLEXE NITRURE DE SILICIUM-MÉTAL, CARTE DE CIRCUIT IMPRIMÉ EN NITRURE DE SILICIUM ET BOÎTIER SEMI-CONDUCTEUR
(JA) 窒化珪素基板、窒化珪素-金属複合体、窒化珪素回路基板、及び、半導体パッケージ
Abstract
(EN)
Provided is a silicon nitride substrate which comprises silicon nitride and magnesium, wherein when the surface of the silicon nitride substrate is analyzed with an X-ray fluorescence analyzer under a specific condition I, XB/XA is 0.8 to 1.0.
(FR)
L'invention concerne un substrat de nitrure de silicium qui comprend du nitrure de silicium et du magnésium, dans lequel, lorsque la surface du substrat de nitrure de silicium est analysée avec un analyseur par fluorescence X sous une condition spécifique I, XB/XA est compris entre 0,8 et 1,0.
(JA)
窒化珪素とマグネシウムを含有する窒化珪素基板であって、窒化珪素基板の表面を、特定の条件Iで、蛍光X線分析装置で分析した際、XB/XAが0.8以上、1.0以下である、窒化珪素基板が提供される。
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