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1. WO2020203680 - GAS PLUG, MEMBER FOR ELECTROSTATIC SUCTION AND PLASMA PROCESSING APPARATUS

Publication Number WO/2020/203680
Publication Date 08.10.2020
International Application No. PCT/JP2020/013782
International Filing Date 26.03.2020
IPC
C04B 38/00 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
38Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
C04B 35/577 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515based on non-oxides
56based on carbides
565based on silicon carbide
569Fine ceramics
577Composites
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 川瀬 悠司 KAWASE, Yuuji
  • 野口 幸雄 NOGUCHI, Yukio
Agents
  • 特許業務法人ブナ国際特許事務所 BUNA PATENT ATTORNEYS
Priority Data
2019-06577329.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAS PLUG, MEMBER FOR ELECTROSTATIC SUCTION AND PLASMA PROCESSING APPARATUS
(FR) PRISE DE GAZ, ÉLÉMENT D'ASPIRATION ÉLECTROSTATIQUE ET APPAREIL DE TRAITEMENT AU PLASMA
(JA) ガスプラグ、静電吸着用部材およびプラズマ処理装置
Abstract
(EN)
A gas plug according to the present disclosure is composed of a columnar porous composite body that is obtained by connecting a plurality of silicon compound phases that are mainly composed of silicon carbide, with a silicon phase that is mainly composed of silicon being interposed therebetween. The porous composite body is internally contained in a cylindrical body that is formed of a dense ceramic.
(FR)
Une prise de gaz selon la présente invention est composée d'un corps composite poreux colonnaire qui est obtenu en reliant une pluralité de phases de composés de silicium qui sont composées principalement de carbure de silicium, avec une phase de silicium qui est composée principalement de silicium intercalée entre celles-ci. Le corps composite poreux est contenu à l'intérieur d'un corps cylindrique qui est formé d'une céramique dense.
(JA)
本開示のガスプラグは、炭化珪素を主成分とする複数の珪素化合物相どうしが、珪素を主成分とする珪素相を介して接続されてなる柱状の多孔質複合体からなる。多孔質複合体は、緻密質のセラミックスからなる筒状体の内部に収容されてなる。
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