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1. WO2020203650 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2020/203650
Publication Date 08.10.2020
International Application No. PCT/JP2020/013680
International Filing Date 26.03.2020
IPC
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 29/47 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 29/872 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H01L 21/329 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
329the devices comprising one or two electrodes, e.g. diodes
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/49 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
49Metal-insulator semiconductor electrodes
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 澤田 達郎 SAWADA, Tatsuro
Agents
  • 荒船 博司 ARAFUNE, Hiroshi
  • 荒船 良男 ARAFUNE, Yoshio
Priority Data
2019-06535129.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置及び半導体装置の製造方法
Abstract
(EN)
A semiconductor device 100, provided with: a semiconductor substrate 101; a first conductivity-type semiconductor layer 102 laminated on the surface of the semiconductor substrate; a trench 104 formed on the surface of the semiconductor layer; an insulating film 107a covering the bottom surface and the side surfaces of the trench; a conductor 108 filling the interior of the trench covered by the insulating film; a second conductivity-type region 102P formed in the semiconductor layer; and a metal film 109a electrically connected to the conductor, the metal film 109a forming a Schottky barrier with the surface 102a of the semiconductor layer. The second conductivity-type region is disposed below the trench, and is within the region of the trench when the semiconductor substrate is viewed in plan view.
(FR)
L'invention concerne un dispositif semi-conducteur comprenant : un substrat semi-conducteur (101) ; une couche semi-conductrice (102) d'un premier type de conductivité stratifiée sur la surface du substrat semi-conducteur ; une tranchée (104) formée sur la surface de la couche semi-conductrice ; un film isolant (107a) qui recouvre la surface inférieure et les surfaces latérales de la tranchée ; un conducteur (108 qui remplit l'intérieur de la tranchée recouverte par le film isolant ; une région (102P) d'un deuxième type de conductivité formée dans la couche semi-conductrice ; et un film métallique (109a) relié électriquement au conducteur, le film métallique (109a) formant une barrière de Schottky avec la surface (102a) de la couche semi-conductrice. La région du deuxième type de conductivité est disposée au-dessous de la tranchée, et se trouve à l'intérieur de la région de la tranchée lorsque le substrat semi-conducteur est visualisé dans une vue en plan.
(JA)
半導体装置100は、半導体基板101と、半導体基板の表面に積層された第1導電型の半導体層102と、半導体層の表面に形成されたトレンチ104と、トレンチの底面及び側面を被膜する絶縁膜107aと、絶縁膜により被膜されたトレンチの内部を埋める導電体108と、半導体層内に形成された第2導電型領域102Pと、導電体に電気的に接続するとともに、半導体層の表面102aとショットキー障壁を形成する金属膜109aとを備える。第2導電型領域はトレンチの下に配置され、半導体基板を平面視したとき、トレンチの領域内に収まっている。
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