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1. WO2020203530 - COMPOSITION FOR PRESSURE BONDING, AND BONDED STRUCTURE OF CONDUCTIVE BODIES AND PRODUCTION METHOD THEREFOR

Publication Number WO/2020/203530
Publication Date 08.10.2020
International Application No. PCT/JP2020/013254
International Filing Date 25.03.2020
IPC
B22F 7/08 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
7Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting
06of composite workpieces or articles from parts, e.g. to form tipped tools
08with one or more parts not made from powder
B22F 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
1Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition
B23K 20/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
H01L 21/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
H01R 4/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
4Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
02Soldered or welded connections
Applicants
  • 三井金属鉱業株式会社 MITSUI MINING & SMELTING CO., LTD. [JP]/[JP]
Inventors
  • 穴井 圭 ANAI, Kei
  • 山内 真一 YAMAUCHI, Shinichi
  • 趙 亭來 JO, Jung-Lae
Agents
  • 特許業務法人翔和国際特許事務所 SHOWA INTERNATIONAL PATENT FIRM
Priority Data
2019-06828829.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR PRESSURE BONDING, AND BONDED STRUCTURE OF CONDUCTIVE BODIES AND PRODUCTION METHOD THEREFOR
(FR) COMPOSITION POUR LIAISON PAR PRESSION, ET STRUCTURE DE LIAISON DE CONDUCTEURS AINSI QUE PROCÉDÉ DE FABRICATION DE CELLE-CI
(JA) 加圧接合用組成物、並びに導電体の接合構造及びその製造方法
Abstract
(EN)
The composition for pressure bonding according to the present invention contains a metal powder and a solid reducing agent and has a compression ratio of 10-90%, which is represented by a relationship expression using a thickness A of a dried coating film formed by drying the composition in the atmosphere at 110°C under the atmospheric pressure for 20 minutes, and a thickness B of a sintered body formed by processing the dried coating film in a nitrogen atmosphere at 280°C under 6 MPa for 20 minutes. The solid reducing agent is preferably BIS-TRIS. In addition, provided is a bonded structure of two conductive bodies in which a bonding portion that bonds the conductive bodies together is formed by processing, under pressure, the two conductive bodies and a coating film of the pressure bonding composition provided therebetween.
(FR)
La composition pour liaison par pression de l'invention contient une poudre métallique et un agent de réduction solide, et présente une compressibilité représentée par une formule relationnelle qui met en œuvre l'épaisseur (A) d'un film de revêtement sec formé par séchage de ladite composition pendant 20 minutes sous pression atmosphérique, dans l'atmosphère à 110°C, et l'épaisseur (B) d'un corps fritté formé par traitement dudit film de revêtement sec pendant 20 minutes à 6MPa, dans une atmosphère d'azote à 280°C, supérieure ou égale à 10% et inférieure ou égale à 90%. De préférence, l'agent de réduction solide consiste en un BIS-TRIS. En outre, l'invention fournit une structure de liaison de conducteurs dans laquelle deux conducteurs, et un film de revêtement de ladite composition de liaison par pression placé entre les deux conducteurs, sont soumis à un traitement sous pression, formant ainsi une région de liaison telle que les deux conducteurs sont liés.
(JA)
本発明の加圧接合用組成物は、金属粉と、固体還元剤とを含み、前記組成物を大気雰囲気下で110℃、大気圧、20分間乾燥して形成した乾燥塗膜の厚みA、及び該乾燥塗膜を窒素雰囲気下で280℃、6MPa、20分間処理して形成した焼結体の厚みBを用いた関係式から表される圧縮率が10%以上90%以下である。固体還元剤が、BIS-TRISであることも好適である。また、2つの導電体と、これらの間に配される前記加圧接合組成物の塗膜とを加圧下で処理して、各導電体を接合する接合部位が形成された導電体の接合構造も提供する。
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