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1. WO2020203250 - PHOTODETECTOR

Publication Number WO/2020/203250
Publication Date 08.10.2020
International Application No. PCT/JP2020/011671
International Filing Date 17.03.2020
IPC
H01L 31/107 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 杉浦 裕樹 SUGIURA, Yuki
  • 井上 暁登 INOUE, Akito
Agents
  • 新居 広守 NII, Hiromori
  • 寺谷 英作 TERATANI, Eisaku
  • 道坂 伸一 MICHISAKA, Shinichi
Priority Data
2019-06762429.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PHOTODETECTOR
(FR) PHOTODÉTECTEUR
(JA) 光検出器
Abstract
(EN)
A photodetector (1) is provided with a pixel array (10) in which a plurality of pixels (11) are arranged in an array, wherein each of the plurality of pixels (11) comprises: a first semiconductor layer (12) of a first conductivity type; a second semiconductor layer (13) of the first conductivity type which is positioned over the first semiconductor layer (12) and has an impurity concentration lower than that of the first semiconductor layer (12); and a first semiconductor region (14) of a second conductivity type different from the first conductivity type which is formed in the second semiconductor layer (13) and is joined with the first semiconductor layer (12). The first semiconductor layer (12) and the first semiconductor region (14) form a multiplying region (15) for multiplying charges by avalanche multiplication. The pixel array (10) includes a first isolating portion (16) of the first conductivity type formed in the second semiconductor layer (13), and a second isolating portion (17) of the first conductivity type formed in the first semiconductor layer (12).
(FR)
L'invention concerne un photodétecteur (1) qui est pourvu d'un réseau de pixels (10) dans lequel une pluralité de pixels (11) sont agencés dans un réseau. Chacun de la pluralité de pixels (11) comprend : une première couche semi-conductrice (12) d'un premier type de conductivité; une seconde couche semi-conductrice (13) du premier type de conductivité qui est positionnée sur la première couche semi-conductrice (12) et qui présente une concentration d'impuretés inférieure à celle de la première couche semi-conductrice (12); et une première région semi-conductrice (14) d'un second type de conductivité différent du premier type de conductivité qui est formé dans la seconde couche semi-conductrice (13) et qui est reliée à la première couche semi-conductrice (12). La première couche semi-conductrice (12) et la première région semi-conductrice (14) forment une région de multiplication (15) pour multiplier les charges par effet avalanche. Le réseau de pixels (10) comprend une première partie isolante (16) du premier type de conductivité formée dans la seconde couche semi-conductrice (13), et une seconde partie isolante (17) du premier type de conductivité formée dans la première couche semi-conductrice (12).
(JA)
光検出器(1)は、複数の画素(11)がアレイ状に配置された画素アレイ(10)を備える光検出器(1)であって、複数の画素(11)のそれぞれは、第1導電型の第1半導体層(12)と、第1半導体層(12)の上方に位置する、第1半導体層(12)よりも不純物濃度が低い第1導電型の第2半導体層(13)と、第2半導体層(13)に形成された、第1半導体層(12)と接合する、第1導電型と異なる第2導電型の第1半導体領域(14)と、を含み、第1半導体層(12)及び第1半導体領域(14)は、アバランシェ増倍によって電荷が増倍される増倍領域(15)を形成し、画素アレイ(10)は、第2半導体層(13)に形成された第1導電型の第1分離部(16)と、第1半導体層(12)に形成された第1導電型の第2分離部(17)とを含む。
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