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1. WO2020202970 - BONDED BODY AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/202970
Publication Date 08.10.2020
International Application No. PCT/JP2020/008653
International Filing Date 02.03.2020
IPC
H01L 21/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
B22F 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
1Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition
B22F 3/10 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
10Sintering only
Applicants
  • 三井金属鉱業株式会社 MITSUI MINING & SMELTING CO., LTD. [JP]/[JP]
Inventors
  • 穴井 圭 ANAI, Kei
  • 山内 真一 YAMAUCHI, Shinichi
  • 趙 亭來 JO, Jung-Lae
  • 坂上 貴彦 SAKAUE, Takahiko
Agents
  • 特許業務法人翔和国際特許事務所 SHOWA INTERNATIONAL PATENT FIRM
Priority Data
2019-06828729.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BONDED BODY AND METHOD FOR MANUFACTURING SAME
(FR) CORPS LIÉ, ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) 接合体及びその製造方法
Abstract
(EN)
A bonded body according to the present invention is obtained by bonding a semiconductor element to a bonding layer that contains Cu. The bonding layer has an extension part that laterally extends from the peripheral edges of the semiconductor element. In a cross-sectional view in the thickness direction, the extension part has a lateral wall surface that rises from or near the peripheral edges of the bottom of the semiconductor element and that is substantially separated from the lateral surfaces of the semiconductor element. The extension part preferably does not have a site where the lateral wall surface comes in contact with the lateral surfaces of the semiconductor element. The present invention also provides a method for manufacturing the bonded body.
(FR)
Le corps lié de l'invention est constitué par liaison d'un élément à semi-conducteurs sur une couche de liaison contenant un Cu. Ladite couche de liaison possède une partie saillie formant une saillie d'un bord périphérique dudit élément à semi-conducteurs vers le côté. Selon une vue en plan transversal dans la direction de l'épaisseur, ladite partie saillie se tient debout depuis le bord périphérique ou la proximité du bord périphérique d'une partie fond dudit élément à semi-conducteurs, et simultanément possède une face paroi latérale substantiellement espacée d'une face latérale dudit élément à semi-conducteurs. De préférence, ladite partie saillie ne présente pas de région de contact mutuel entre ladite face paroi latérale et la face latérale dudit élément à semi-conducteurs. Enfin, l'invention fournit un procédé de fabrication de corps lié.
(JA)
本発明の接合体は、半導体素子がCuを含む接合層に接合されてなる。前記接合層は、前記半導体素子の周縁から側方に延出した延出部を有する。厚み方向の断面視において、前記延出部は、前記半導体素子の底部の周縁又は周縁近傍から立ち上がるとともに、該半導体素子の側面から実質的に離間した側壁面を有する。前記延出部は、前記側壁面と前記半導体素子の側面とが互いに接する部位を有しないことも好適である。また本発明は、接合体の製造方法も提供する。
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