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1. WO2020201547 - INTEGRATABLE CAPACITOR

Publication Number WO/2020/201547
Publication Date 08.10.2020
International Application No. PCT/EP2020/059657
International Filing Date 03.04.2020
IPC
H01L 49/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Thin-film or thick-film devices
H01G 4/008 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
008Selection of materials
H01G 4/012 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
012Form of non-self-supporting electrodes
H01L 29/94 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
CPC
H01G 4/008
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
008Selection of materials
H01G 4/012
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
012Form of non-self-supporting electrodes
H01L 28/90
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
60Electrodes
82with an enlarged surface, e.g. formed by texturisation
90having vertical extensions
H01L 29/945
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
945Trench capacitors
Applicants
  • MECKLENBURG, Arno [DE]/[DE]
Inventors
  • MECKLENBURG, Arno
Agents
  • HOFFMANN EITLE PATENT- UND RECHTSANWÄLTE PARTMBB, ASSOCIATION NO. 151
Priority Data
10 2019 002 515.605.04.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) INTEGRIERBARER KONDENSATOR
(EN) INTEGRATABLE CAPACITOR
(FR) CONDENSATEUR INTÉGRABLE
Abstract
(DE)
Kondensator umfassend: einen ersten porösen Halbleiter mit einer mittleren Porengröße zwischen 20nm und 200nm und bevorzugt zwischen 40nm und 100nm, zumindest einen zweiten elektrischen Leiter, wobei der zweite elektrische Leiter die poröse Struktur infiltriert und die beteiligten Materialien dahingehend ausgewählt werden, dass zwischen dem ersten porösen Halbleiter und dem zweiten Leiter ohne Anlegen einer äußeren Spannung infolge der Diffusion von Ladungsträgern eine Potentialbarriere gebildet wird, welche bevorzugt mehr als 0,5V, weiter bevorzugt mehr als 0,7V, weiter bevorzugt mehr als 1V und weiter bevorzugt mehr als 1,4V beträgt, wobei bevorzugt zwischen dem ersten porösen Halbleiter und dem zweiten elektrischen Leiter eine dielektrische Schicht mit einer Dicke von 1nm bis 10nm angeordnet ist.
(EN)
The capacitor comprises: a first porous semiconductor with an average pore size ranging between 20 nm and 200 nm, preferably between 40 nm and 100 nm, and at least one second electric conductor, wherein the second electric conductor infiltrates the porous structure, and the involved materials are selected such that a potential barrier is formed between the first porous semiconductor and the second conductor without applying an external voltage as a result of the diffusion of load carriers, said voltage equaling preferably more than 0.5 V, particularly more than 0.7 V, particularly more than 1 V, particularly more than 1.4 V. A dielectric layer with a thickness of 1 nm to 10 nm is arranged preferably between the first porous semiconductor and the second electric conductor.
(FR)
La présente invention concerne un condensateur comportant : un premier semi-conducteur poreux ayant une taille de pores moyenne entre 20 nm et 200 nm et de préférence entre 40 nm et 100 nm, au moins un second conducteur électrique, le second conducteur électrique infiltrant la structure poreuse et les matériaux participants étant choisis de manière que, sans appliquer une tension externe, une barrière de potentiel est formée entre le premier semi-conducteur poreux et le second conducteur suite à la diffusion de porteurs de charge, laquelle barrière étant de préférence supérieure à 0,5 V, de préférence encore supérieure à 0,7 V, encore plus de préférence supérieure à 1 V et idéalement supérieure à 1,4 V. De préférence, une couche diélectrique ayant une épaisseur de 1 nm jusqu’à 10 nm est disposée entre le premier semi-conducteur poreux et le second conducteur électrique.
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