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1. WO2020200645 - METHOD FOR PRODUCING A PLURALITY OF COMPONENTS, COMPONENT, AND COMPOSITE COMPONENT MADE OF COMPONENTS

Publication Number WO/2020/200645
Publication Date 08.10.2020
International Application No. PCT/EP2020/056045
International Filing Date 06.03.2020
IPC
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 33/0093
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0093Wafer bonding; Removal of the growth substrate
H01L 33/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • SUNDGREN, Petrus
  • BIEBERSDORF, Andreas
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2019 108 701.503.04.2019DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINER MEHRZAHL VON BAUTEILEN, BAUTEIL UND BAUTEILVERBUND AUS BAUTEILEN
(EN) METHOD FOR PRODUCING A PLURALITY OF COMPONENTS, COMPONENT, AND COMPOSITE COMPONENT MADE OF COMPONENTS
(FR) PROCÉDÉ DE FABRICATION D'UNE PLURALITÉ DE PIÈCES STRUCTURALES, PIÈCE STRUCTURALE ET ENSEMBLE DE PIÈCES STRUCTURALES CONSTITUÉ DE PIÈCES STRUCTURALES
Abstract
(DE)
Es wird ein Bauteilverbund (100) aus einer Mehrzahl von Bauteilen (10), einer modifizierten Opferschicht (4) und einem gemeinsamen Zwischenträger (90) angegeben, bei dem die Bauteile jeweils einen Halbleiterkörper (2) mit einer aktiven Zone (23) aufweisen, wobei die Halbleiterkörper auf dem Zwischenträger angeordnet und durch Trenngräben (4T) voneinander lateral beabstandet sind. Die Opferschicht in vertikaler Richtung zwischen dem Zwischenträger und den Halbleiterkörpern angeordnet, wobei die Opferschicht mehrere Halteelemente (3) zwischen den Halbleiterkörpern und dem gemeinsamen Zwischenträger aufweist, und wobei die Halbleiterkörper ausschließlich über die Halteelemente mit dem Zwischenträger mechanisch verbunden sind. Die Halteelemente sind in lateralen Richtungen von Hohlräumen (4H) umgeben. Die Halbleiterkörper sind von dem Zwischenträger ablösbar ausgeführt, wobei die Halteelemente die Halbleiterkörper unter mechanischer Belastung oder durch Bestrahlung oder durch Ätzung von dem Zwischenträger freigeben. Des Weiteren werden ein Bauteil (10) mit einem Halbleiterkörper (2), der aus einem solchen Bauteilverbund (100) abgelöst ist, sowie ein Verfahren zur Herstellung einer Mehrzahl von solchen Bauteilen angegeben.
(EN)
The invention relates to a composite component (100) made of a plurality of components (10), a modified sacrificial layer (4) and a common intermediate carrier (90), in which the components each have a semiconductor body (2) with an active zone (23), the semiconductor bodies being arranged on the intermediate carrier and being laterally spaced apart from one another by means of isolating trenches (4T). The sacrificial layer is arranged in the vertical direction between the intermediate carrier and the semiconductor bodies, the sacrificial layer having a plurality of retaining elements (3) between the semiconductor bodies and the common intermediate carrier, and the semiconductor bodies being mechanically connected to the intermediate carrier only by means of the retaining elements. The retaining elements are surrounded by cavities (4H) in lateral directions. The semiconductor bodies are designed to be detachable from the intermediate carrier, wherein the retaining elements release the semiconductor bodies from the intermediate carrier under mechanical strain or by means of irradiation or by means of etching. The invention further relates to a component (10) having a semiconductor body (2) which is detached from a composite component (100) of this type, and to a method for producing a plurality of components of this type.
(FR)
L'invention concerne un ensemble de pièces structurales (100) constitué d'une pluralité de pièces structurales (10), d'une couche sacrificielle modifiée (4) et d'un support intermédiaire commun (90), selon lequel les pièces structurales présentent chacune un corps semi-conducteur (2) comportant une zone active (23), les corps semi-conducteurs étant agencés sur le support intermédiaire et espacés les uns des autres de façon latérale par des tranchées de séparation (4T). La couche sacrificielle est agencée en direction verticale entre le support intermédiaire et les corps semi-conducteurs, la couche sacrificielle présentant plusieurs éléments de maintien (3) entre les corps semi-conducteurs et le support intermédiaire commun, et les corps semi-conducteurs étant reliés mécaniquement au support intermédiaire exclusivement par l'intermédiaire des éléments de maintien. Les éléments de maintien sont entourés, dans les directions latérales, par des espaces creux (4H). Les corps semi-conducteurs sont conçus de manière à pouvoir être détachés du support intermédiaire, les éléments de maintien libérant les corps semi-conducteurs du support intermédiaire sous charge mécanique ou par rayonnement ou par gravure. L'invention concerne en outre une pièce structurale (10) comportant un corps semi-conducteur (2), qui est enlevé d'un tel ensemble de pièces structurales (100), ainsi qu'un procédé de fabrication d'une pluralité de telles pièces structurales.
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